X-On Electronics has gained recognition as a prominent supplier of FDME1023PZT MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDME1023PZT MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDME1023PZT ON Semiconductor

FDME1023PZT electronic component of ON Semiconductor
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Part No.FDME1023PZT
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20V Dual P-Channel PowerTrench
Datasheet: FDME1023PZT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.83 ea
Line Total: USD 1.83 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 5000
Multiples : 5000
5000 : USD 0.4322
10000 : USD 0.3993
25000 : USD 0.3868

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0651
10 : USD 0.9202
100 : USD 0.7176
500 : USD 0.5927
1000 : USD 0.4679
2000 : USD 0.4368

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0651
10 : USD 0.9202
100 : USD 0.7176
500 : USD 0.5927
1000 : USD 0.4679
2000 : USD 0.4368

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.83
10 : USD 0.8866
100 : USD 0.4943
500 : USD 0.3911
1000 : USD 0.3129
2500 : USD 0.2838
5000 : USD 0.2747

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0379
5 : USD 0.7817
25 : USD 0.6832
27 : USD 0.5781
73 : USD 0.5387

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 18
Multiples : 1
18 : USD 0.3335
25 : USD 0.3284
100 : USD 0.3233
250 : USD 0.3181
500 : USD 0.3129
1000 : USD 0.3078
3000 : USD 0.3027

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 18
Multiples : 1
18 : USD 0.3442
25 : USD 0.3389
100 : USD 0.3335
250 : USD 0.3282
500 : USD 0.3229
1000 : USD 0.3176
3000 : USD 0.3123

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the FDME1023PZT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDME1023PZT and other electronic components in the MOSFETs category and beyond.

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDME1023PZT Dual P-Channel PowerTrench MOSFET July 2010 FDME1023PZT Dual P-Channel PowerTrench MOSFET -20 V, -2.6 A, 142 m Features General Description This device is designed specifically as a single package solution Max r = 142 m at V = -4.5 V, I = -2.3 A DS(on) GS D for the battery charges switch in cellular handset and other Max r = 213 m at V = -2.5 V, I = -1.8 A DS(on) GS D ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum Max r = 331 m at V = -1.8 V, I = -1.5 A DS(on) GS D conduction losses. When connected in the typical common Max r = 530 m at V = -1.5 V, I = -1.2 A source configuration, bi-directional current flow is possible. DS(on) GS D Low profile: 0.55 mm maximum in the new package The MicroFET 1.6x1.6 Thin package offers exceptional thermal MicroFET 1.6x1.6 Thin performance for it s physical size and is well suited to switching and linear mode applications. Free from halogenated compounds and antimony oxides HBM ESD protection level > 1600 V (Note 3) Applications RoHS Compliant Load Switch Battery Charging Battery Disconnect Switch D2 G1 S1 D2 S1 1 6 D1 Pin 1 D1 G1 2 5 G2 S2 G2 D2 3 4 S2 D1 TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS Drain Current -Continuous T = 25 C (Note 1a) -2.6 A I A D -Pulsed -6 Power Dissipation for Single Operation T = 25 C (Note 1a) 1.4 A P W D Power Dissipation for Single Operation T = 25 C (Note 1b) 0.6 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 JA C/W R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2T FDME1023PZT MicroFET 1.6x1.6 Thin 7 8 mm 5000 units 1 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FDME1023PZT Rev.C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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