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FDME1024NZT Dual N-Channel PowerTrench MOSFET July 2010 FDME1024NZT Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m Features General Description Max r = 66 m at V = 4.5 V, I = 3.4 A This device is designed specifically as a single package solution DS(on) GS D for dual switching requirement in cellular handset and other Max r = 86 m at V = 2.5 V, I = 2.9 A DS(on) GS D ultra-portable applications. It features two independent Max r = 113 m at V = 1.8 V, I = 2.5 A N-Channel MOSFETs with low on-state resistance for minimum DS(on) GS D conduction losses. Max r = 160 m at V = 1.5 V, I = 2.1 A DS(on) GS D Low profile: 0.55 mm maximum in the new package The MicroFET 1.6x1.6 Thin package offers exceptional thermal MicroFET 1.6x1.6 Thin performance for it s physical size and is well suited to switching and linear mode applications. Free from halogenated compounds and antimony oxides Applications HBM ESD protection level > 1600 V (Note 3) Baseband Switch RoHS Compliant Load Switch D2 G1 S1 D2 Pin 1 D1 S2 G2 D1 BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 8 V GS Drain Current -Continuous T = 25 C (Note 1a) 3.8 A I A D -Pulsed 6 Power Dissipation for Single Operation T = 25 C (Note 1a) 1.4 A P W D Power Dissipation for Single Operation T = 25 C (Note 1b) 0.6 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 JA C/W R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 4T FDME1024NZT MicroFET 1.6x1.6 Thin 7 8 mm 5000 units 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDME1024NZT Rev.C1