FDME905PT P-Channel POWERTRENCH MOSFET 12 V, 8 A, 22 m www.onsemi.com General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It V I MAX R MAX DS D DS(on) features a MOSFET with low on state resistance. 12 V 8 A 22 m The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. ELECTRICAL CONNECTION Features Bottom Drain Contact Max R = 22 m at V = 4.5 V, I = 8 A 1 DS(on) GS D 6 Max R = 26 m at V = 2.5 V, I = 7.3 A DS(on) GS D 2 5 Max R = 97 m at V = 1.8 V, I = 3.8 A DS(on) GS D Low Profile: 0.55 mm Maximum in the New Package MicroFET 3 4 1.6x1.6 Thin Free from Halogenated Compounds and Antimony Oxides P-Channel MOSFET These Devices are PbFree and are RoHS Compliant G D S D Pin 1 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Ratings Unit S D V Drain to Source Voltage 12 V DS D Top View Bottom View V Gate to Source Voltage 8 V GS I Drain Current A MicroFET D Continuous (T = 25C) (Note 1a) 8 A (UDFN6) Pulsed 30 CASE 517DV P Power Dissipation W D 2.1 (T = 25C) (Note 1a) A MARKING DIAGRAM 0.7 (T = 25C) (Note 1b) A T , T Operating and Storage Junction 55 to +150 C J STG Temperature Range &Z&2&K Stresses exceeding those listed in the Maximum Ratings table may damage the E95 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. &Z = Assembly Plant Code &2 = Numeric Date Code &K = Lot Code E95 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: February, 2018 Rev. 3 FDME905PT/DFDME905PT THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case 4.5 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 60 C/W JA R Thermal Resistance, Junction to Ambient (Note 1b) 175 C/W JA 1. Repetitive rating: pulsewidth limited by maximum junction temperature. a) 60 C/W when mounted on b). 175 C/W when mounted on a 2 a 1 in pad of 2 oz copper minimum pad of 2 oz copper PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity E95 FDME905PT MicroFET 1.6x1.6 Thin 7 8 mm 5,000 Units (PbFree / Halide Free) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 12 V DSS D GS BV / T Breakdown Voltage Temperature I = 250 A, referenced to 25C 8.7 mV/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V = 9.6 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current, V = 8 V, V = 0 V 100 nA GSS GS DS Forward ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 0.4 0.7 1.0 V GS(th) GS DS D V / T Gate to Source Threshold Voltage I = 250 A, referenced to 25C 2.5 mV/ C GS(th) J D Temperature Coefficient www.onsemi.com 2