X-On Electronics has gained recognition as a prominent supplier of FDME905PT MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDME905PT MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDME905PT ON Semiconductor

FDME905PT electronic component of ON Semiconductor
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See Product Specifications
Part No.FDME905PT
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET -12V P-Channel PowerTrench MOSFET
Datasheet: FDME905PT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6063 ea
Line Total: USD 0.61 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.4068
10000 : USD 0.3761
25000 : USD 0.3617

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1294
10 : USD 0.9547
100 : USD 0.732
500 : USD 0.5786
1000 : USD 0.4629
2000 : USD 0.4195

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1294
10 : USD 0.9547
100 : USD 0.732
500 : USD 0.5786
1000 : USD 0.4629
2000 : USD 0.4195

0
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6063
10 : USD 0.5947
30 : USD 0.5851
100 : USD 0.5774

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.4575
10 : USD 0.9038
100 : USD 0.6657
500 : USD 0.5268
1000 : USD 0.421
2500 : USD 0.3814
5000 : USD 0.3697

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.106
5 : USD 0.742
25 : USD 0.6524
30 : USD 0.546
82 : USD 0.518

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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We are delighted to provide the FDME905PT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDME905PT and other electronic components in the MOSFETs category and beyond.

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FDME905PT P-Channel POWERTRENCH MOSFET 12 V, 8 A, 22 m www.onsemi.com General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It V I MAX R MAX DS D DS(on) features a MOSFET with low on state resistance. 12 V 8 A 22 m The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. ELECTRICAL CONNECTION Features Bottom Drain Contact Max R = 22 m at V = 4.5 V, I = 8 A 1 DS(on) GS D 6 Max R = 26 m at V = 2.5 V, I = 7.3 A DS(on) GS D 2 5 Max R = 97 m at V = 1.8 V, I = 3.8 A DS(on) GS D Low Profile: 0.55 mm Maximum in the New Package MicroFET 3 4 1.6x1.6 Thin Free from Halogenated Compounds and Antimony Oxides P-Channel MOSFET These Devices are PbFree and are RoHS Compliant G D S D Pin 1 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Ratings Unit S D V Drain to Source Voltage 12 V DS D Top View Bottom View V Gate to Source Voltage 8 V GS I Drain Current A MicroFET D Continuous (T = 25C) (Note 1a) 8 A (UDFN6) Pulsed 30 CASE 517DV P Power Dissipation W D 2.1 (T = 25C) (Note 1a) A MARKING DIAGRAM 0.7 (T = 25C) (Note 1b) A T , T Operating and Storage Junction 55 to +150 C J STG Temperature Range &Z&2&K Stresses exceeding those listed in the Maximum Ratings table may damage the E95 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. &Z = Assembly Plant Code &2 = Numeric Date Code &K = Lot Code E95 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: February, 2018 Rev. 3 FDME905PT/DFDME905PT THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case 4.5 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 60 C/W JA R Thermal Resistance, Junction to Ambient (Note 1b) 175 C/W JA 1. Repetitive rating: pulsewidth limited by maximum junction temperature. a) 60 C/W when mounted on b). 175 C/W when mounted on a 2 a 1 in pad of 2 oz copper minimum pad of 2 oz copper PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity E95 FDME905PT MicroFET 1.6x1.6 Thin 7 8 mm 5,000 Units (PbFree / Halide Free) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 12 V DSS D GS BV / T Breakdown Voltage Temperature I = 250 A, referenced to 25C 8.7 mV/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V = 9.6 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current, V = 8 V, V = 0 V 100 nA GSS GS DS Forward ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 0.4 0.7 1.0 V GS(th) GS DS D V / T Gate to Source Threshold Voltage I = 250 A, referenced to 25C 2.5 mV/ C GS(th) J D Temperature Coefficient www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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