MOSFET - Complementary, POWERTRENCH NChannel: 20 V, 3.8 A, 66 m PChannel: 20 V, 2.6 A, 142 m FDME1034CZT www.onsemi.com General Description This device is designed specifically as a single package solution for a DC/DC Switching MOSFET in cellular handset and other ultraportable applications. It features an independent NChannel & PChannel MOSFET with low onstate resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. D2(P3) Features G1(P2) D2(P8) S1 Q1: NChannel D1(P7) Pin 1 Max r = 66 m at V = 4.5 V, I = 3.4 A DS(on) GS D S2(P4) G2(P5) Max r = 86 m at V = 2.5 V, I = 2.9 A DS(on) GS D D1(P6) Max r = 113 m at V = 1.8 V, I = 2.5 A DS(on) GS D Bottom Top Max r = 160 m at V = 1.5 V, I = 2.1 A DS(on) GS D Q2: PChannel Note: Center pad of P7 & P8 is a virtual pin number. Actual P7 & P8 is connected Max r = 142 m at V = 4.5 V, I = 2.3 A DS(on) GS D to edge pad of P6 & P3 respectively. Max r = 213 m at V = 2.5 V, I = 1.8 A DS(on) GS D UDFN6 1.6x1.6, 0.5P Max r = 331 m at V = 1.8 V, I = 1.5 A DS(on) GS D CASE 517DW Max r = 530 m at V = 1.5 V, I = 1.2 A DS(on) GS D Low Profile: 0.55 mm Maximum in the New Package MicroFET MARKING DIAGRAM 1.6x1.6 Thin Free from Halogenated Compounds and Antimony Oxides Y&Z&2&K HBM ESD Protection Level > 1600 V (Note 3) 5T This Device is PbFree and is RoHS Compliant Applications Y = ON Semiconductor Logo &Z = Assembly Plant Code DCDC Conversion &2 = Numeric Date Code Level Shifted Load Switch &K = Lot Code 5T = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: October, 2019 Rev. 1 FDME1034CZT/DFDME1034CZT MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 20 20 V DS V Gate to Source Voltage 8 8 V GS I A Drain Current Continuous T = 25C (Note 1a) 3.8 2.6 D A Pulsed 6 6 Power Dissipation for Single Operation T = 25C (Note 1a) 1.4 A P W D Power Dissipation for Single Operation T = 25C (Note 1b) 0.6 A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Units RJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 C/W RJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Shipping 5T FDME1034CZT UDFN6 1.6x1.6, 0.5P (PbFree) 5000 units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2