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FDME410NZT N-Channel PowerTrench MOSFET October 2013 FDME410NZT N-Channel PowerTrench MOSFET 20 V, 7 A, 26 m Features General Description This Single N-Channel MOSFET has been designed using Max r = 26 m at V = 4.5 V, I = 7 A DS(on) GS D Fairchild Semiconductors advanced Power Trench process to Max r = 31 m at V = 2.5 V, I = 6 A DS(on) GS D optimize the r VGS = 1.5 V on special MicroFET DS(ON) Max r = 39 m at V = 1.8 V, I = 5 A DS(on) GS D leadframe. Max r = 53 m at V = 1.5 V, I = 4 A Applications DS(on) GS D Low profile: 0.55 mm maximum in the new package Li-lon Battery Pack MicroFET 1.6x1.6 Thin Baseband Switch Free from halogenated compounds and antimony oxides Load Switch HBM ESD protection level > 1800V (Note3) DC-DC Conversion RoHS Compliant G D D S Pin 1 D D D D S D S G D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 8 V GS Drain Current -Continuous T = 25 C (Note 1a) 7 A I A D -Pulsed 15 Power Dissipation for Single Operation T = 25 C (Note 1a) 2.1 A P W D Power Dissipation for Single Operation T = 25 C (Note 1b) 0.7 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 60 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 175 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 6T FDME410NZT MicroFET 1.6x1.6 Thin 7 8 mm 5000 units 1 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDME410NZT Rev.C3