MOSFET, N-Channel, POWERTRENCH Q1: 30 V, 66 A, 4 m Q2: 30 V, 42 A, 5.5 m FDMD8900 www.onsemi.com General Description This devices utilizes two optimized Nch FETs in a dual 3.3 x 5 mm 1 12 D1 G1 thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, 2 11 D1 G1R helping to provide the best FOM. D2/S1 3 10 D1 D2/S1 Features 4 9 G2 Q1: NChannel 5 8 S2 D2/S1 Max r = 4 m at V = 10 V, I = 19 A DS(on) GS D 6 7 S2 D2/S1 Max r = 5 m at V = 4.5 V, I = 17 A DS(on) GS D Max r = 6.5 m at V = 3.8 V, I = 15 A DS(on) GS D Max r = 8.3 m at V = 3.5 V, I = 14 A DS(on) GS D Q2: NChannel Max r = 5.5 m at V = 10 V, I = 17 A DS(on) GS D Max r = 6.5 m at V = 4.5 V, I = 15 A DS(on) GS D Max r = 9 m at V = 3.8 V, I = 13 A DS(on) GS D Max r = 12 m at V = 3.5 V, I = 12 A DS(on) GS D Power 3.3 x 5 Ideal for Flexible Layout in Primary Side of Bridge Topology 100% UIL Tested PQFN12 3.3X5, 0.65P CASE 483BN Kelvin High Side MOSFET Drive Pinout Capability This Device is PbFree and is RoHS Compliant MARKING DIAGRAM Applications Computing Buck, Boost and Buck/Boost Applications Y&Z&3&K 8900 General Purpose POL Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code 8900 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: August, 2019 Rev. 2 FDMD8900/DFDMD8900 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) A Symbol Parameter Q1 Q2 Units VDS Drain to Source Voltage 30 30 V VGS Gate to Source Voltage 12 12 V I A Drain Current Continuous T = 25C (Note 5) 66 42 D C 42 26 Continuous T = 100C (Note 5) C 19 17 Continuous T = 25C (Note 1a) A Pulsed (Note 4) 280 210 EAS Single Pulse Avalanche Energy (Note 3) 73 54 mJ Power Dissipation T = 25C 27 15 C P W D Power Dissipation T = 25C (Note 1a) 2.1 A TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Ratings Unit RJC Thermal Resistance, Junction to Case 4.7 8.4 C/W RJA Thermal Resistance, Junction to Ambient (Note 1a) 60 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Shipping 8900 FDMD8900 PQFN12 3.3x5, 0.65P (PbFree) 3000 units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2