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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMD8580 Dual N-Channel PowerTrench MOSFET December 2015 FDMD8580 Dual N-Channel PowerTrench MOSFET Q1: 80 V, 82 A, 4.6 m Q2: 80 V, 82 A, 4.6 m Features General Description Q1: N-Channel This device includes two 80V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain Max r = 4.6 m at V = 10 V, I = 16 A DS(on) GS D internally connected for half/full bridge, low source inductance Max r = 6.0 m at V = 8 V, I = 14 A DS(on) GS D package, low r /Qg FOM silicon. DS(on) Q2: N-Channel Applications Max r = 4.6 m at V = 10 V, I = 16 A DS(on) GS D Synchronous Buck: Primary Switch of Half / Full Bridge Max r = 6.0 m at V = 8 V, I = 14 A DS(on) GS D Converter for Telecom Ideal for Flexible Layout in Primary Side of Bridge Topology Motor Bridge: Primary Switch of Half / Full Bridge Converter for BLDC Motor 100% UIL Tested MV POL: 48V Synchronous Buck Switch Kelvin High Side MOSFET Drive Pin-out Capability RoHS Compliant Half/Full Bridge Secondary Synchronous Rectification Top Bottom D2/S1 D2/S1 G1 G2 Pin 1 D2/S1 G2 S2 GR D2/S1 D1 D1 D1 D2/S1 D1 D1 D2/S1 GR Pin 1 G1 Power 5 x 6 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 80 80 V DS V Gate to Source Voltage 20 20 V GS Drain Current -Continuous T = 25 C (Note 5) 82 82 C -Continuous T = 100 C (Note 5) 52 52 C I A D 1a 1b -Continuous T = 25 C 16 16 A -Pulsed (Note 4) 482 482 E Single Pulse Avalanche Energy (Note 3) 337 337 mJ AS Power Dissipation T = 25 C 59 59 C P W D 1a 1b Power Dissipation T = 25 C 2.3 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.1 2.1 JC C/W 1a 1b R Thermal Resistance, Junction-to-Ambient 55 55 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMD8580 FDMD8580 Power 5 x 6 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMD8580 Rev.1.0