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FDMD82100 Dual N-Channel PowerTrench MOSFET June 2014 FDMD82100 Dual N-Channel Power Trench MOSFET 100 V, 25 A, 19 m Features General Description Max r = 19 m at V = 10 V, I = 7 A This device includes two 100V N-Channel MOSFETs in a dual DS(on) GS D Power (3.3 mm X 5 mm) package. HS source and LS Drain Max r = 33 m at V = 6 V, I = 5.5 A DS(on) GS D internally connected for half/full bridge, low source inductance Ideal for flexible layout in primary side of bridge topology package, low r /Qg FOM silicon. DS(on) Termination is Lead-free and RoHS Compliant Applications 100% UIL tested Synchronous Buck : Primary Switch of Half / Full bridge Kelvin High Side MOSFET drive pin-out capability converter for telecom Motor Bridge : Primary Switch of Half / Full bridge converter for BLDC motor MV POL : 48V Synchronous Buck Switch Pin 1 D1 1 12 G1 2 11 D1 G1R D2/S1 D1 3 10 D2/S1 G2 4 9 S2 5 8 D2/S1 S2 6 7 D2/S1 Power 3.3 x 5 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 25 C I -Continuous T = 25 C (Note 1a) 7 A D A -Pulsed (Note 4) 80 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25 C (Note 1a) 2.1 A P W D Power Dissipation T = 25 C (Note 1b) 1 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.1 JC R Thermal Resistance, Junction to Ambient (Note 1a) 60 C/W JA R Thermal Resistance, Junction to Ambient (Note 1b) 130 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 82100 FDMD82100 Power 3.3 x 5 13 12 mm 3000 units 1 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMD82100 Rev.C1