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FDMD8530 Dual N-Channel PowerTrench MOSFET October 2015 FDMD8530 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 201 A, 1.25 m Q2: 30 V, 201 A, 1.25 m Features General Description Q1: N-Channel This device includes two 30V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain Max r = 1.25 m at V = 10 V, I = 35 A DS(on) GS D internally connected for half/full bridge, low source inductance Max r = 1.5 m at V = 4.5 V, I = 32 A DS(on) GS D package, low r /Qg FOM silicon. DS(on) Q2: N-Channel Applications Max r = 1.25 m at V = 10 V, I = 35 A DS(on) GS D POL Synchronous Dual Max r = 1.5 m at V = 4.5 V, I = 32 A DS(on) GS D One Phase Motor Half Bridge Ideal for Flexible Layout in Primary Side of Bridge Topology Half/Full Bridge Secondary Synchronous Rectification 100% UIL Tested Kelvin High Side MOSFET Drive Pin-out Capability RoHS Compliant Top Bottom D2/S1 D2/S1 G1 G2 Pin 1 D2/S1 G2 S2 GR D2/S1 D1 D1 D1 D2/S1 D1 D1 D2/S1 GR Pin 1 G1 Power 5 x 6 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage 20 20 V GS Drain Current -Continuous T = 25 C (Note 5) 201 201 C -Continuous T = 100 C (Note 5) 127 127 C I A D 1a 1b Drain Current -Continuous T = 25 C 35 35 A -Pulsed (Note 4) 1047 1047 E Single Pulse Avalanche Energy (Note 3) 661 661 mJ AS Power Dissipation T = 25 C 78 78 C P W D 1a 1b Power Dissipation T = 25 C 2.2 2.2 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.6 1.6 JC C/W 1a 1b R Thermal Resistance, Junction-to-Ambient 55 55 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMD8530 FDMD8530 Power 5 x 6 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMD8530 Rev.1.0