MOSFET Dual, N-Channel, POWERTRENCH Q1: 40 V, 156 A, 1.5 m Q2: 40 V, 156 A, 1.5 m FDMD8540L www.onsemi.com General Description This device includes two 40 V NChannel MOSFETs in a dual V r MAX I MAX DS DS(ON) D Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low 40 V 1.5 m 10 V 156 A r /Qg FOM silicon. DS(on) 2.2 m 4.5 V Features Q1: NChannel D2/S1 Max r = 1.5 m at V = 10 V, I = 33 A D2/S1 DS(on) GS D Pin 1 D2/S1 Max r = 2.2 m at V = 4.5 V, I = 26 A G2 DS(on) GS D S2 Q2: NChannel D1 D1 Max r = 1.5 m at V = 10 V, I = 33 A DS(on) GS D D1 Max r = 2.2 m at V = 4.5 V, I = 26 A GR DS(on) GS D Pin 1 G1 Ideal for Flexible Layout in Primary Side of Bridge Topology Top Bottom 100% UIL Tested PQFN8 5X6, 1.27P Power 5 x 6 Kelvin High Side MOSFET Drive Pinout Capability CASE 483AT This Device is PbFree and are RoHS Compliant Applications MARKING DIAGRAM POL Synchronous Dual Y&Z&3&K One Phase Motor Half Bridge FDMD Half/Full Bridge Secondary Synchronous Rectification 8540L FDMD8540L = Specific Device Code Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3Digit Date Code Format &K = 2Digits Lot Run Traceability Data G1 G2 GR D2/S1 D1 D2/S1 D1 D2/S1 ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: April, 2021 Rev. 2 FDMD8540L/DSS SS SF SF DS DS DF DF G G SS SS SF SF DS DS DF DF G G FDMD8540L MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Q1 Q2 Unit V Drain to Source Voltage 40 40 V DS V Gate to Source Voltage 20 20 V GS I Drain Current A Continuous T = 25C (Note 3) 156 156 D C Continuous T = 100C (Note 3) 99 99 C Continuous T = 25C 33 (Note 4a) 33 (Note 4b) A Pulsed (Note 2) 886 886 Single Pulse Avalanche Energy (Note 1) 541 541 mJ E AS P Power Dissipation T = 25C 62 62 W D C Power Dissipation T = 25C 2.3 (Note 4a) 2.3 (Note 4b) A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Q1: E of 541 mJ is based on starting T = 25C, L = 3 mH, I = 19 A, V = 40 V, V = 10 V. 100% tested at L = 0.1 mH, I = 59 A. AS J AS DD GS AS Q2: E of 541 mJ is based on starting T = 25C, L = 3 mH, I = 19 A, V = 40 V, V = 10 V. 100% tested at L = 0.1 mH, I = 59 A. AS J AS DD GS AS 2. Pulsed Id please refer to Figure 11 and Figure 24 SOA graph for more details. 3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electromechanical application board design. THERMAL CHARACTERISTICS Symbol Parameter Q1 Q2 Unit R Thermal Resistance, JunctiontoCase 2.0 2.0 C/W JC R Thermal Resistance, JunctiontoAmbient 55 (Note 4a) 55 (Note 4b) JA 2 4. R is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR4 material. R is guaranteed JA JC by design while R is determined by the users board design. CA a. 55C/W when mounted on b. 55C/W when mounted on 2 2 a 1 in pad of 2 oz copper a 1 in pad of 2 oz copper c. 155C/W when mounted on d. 155C/W when mounted on a minimum pad of 2 oz copper a minimum pad of 2 oz copper www.onsemi.com 2