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FDMD8280 Dual N-Channel PowerTrench MOSFET October 2014 FDMD8280 Dual N-Channel Power Trench MOSFET 80 V, 40 A, 8.2 m Features General Description Max r = 8.2 m at V = 10 V, I = 11 A This device includes two 80V N-Channel MOSFETs in a dual DS(on) GS D Power (3.3 mm X 5 mm) package. HS source and LS Drain Max r = 11 m at V = 8 V, I = 9.5 A DS(on) GS D internally connected for half/full bridge, low source inductance Ideal for flexible layout in primary side of bridge topology package, low r /Qg FOM silicon. DS(on) Termination is Lead-free and RoHS Compliant Applications 100% UIL tested Synchronous Buck : Primary Switch of Half / Full bridge Kelvin High Side MOSFET drive pin-out capability converter for telecom Motor Bridge : Primary Switch of Half / Full bridge converter for BLDC motor MV POL : 48V Synchronous Buck Switch Pin 1 1 12 D1 G1 2 11 D1 G1R D2/S1 3 10 D1 D2/S1 4 9 G2 5 8 S2 D2/S1 6 7 S2 D2/S1 Power 3.3 x 5 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 40 C I Drain Current -Continuous T = 25 C (Note 1a) 11 A D A -Pulsed (Note 4) 160 E Single Pulse Avalanche Energy (Note 3) 150 mJ AS Power Dissipation T = 25 C 38 C P Power Dissipation T = 25 C (Note 1a) 2.1 W D A Power Dissipation T = 25 C (Note 1b) 1 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.3 JC R Thermal Resistance, Junction to Ambient (Note 1a) 60 C/W JA R Thermal Resistance, Junction to Ambient (Note 1b) 130 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 8280 FDMD8280 Power 3.3 x 5 13 12 mm 3000 units 1 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMD8280 Rev.C