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FDMC86320 N-Channel Power Trench MOSFET June 2014 FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 m Features General Description Max r = 11.7 m at V = 10 V, I = 10.7 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 16 m at V = 8 V, I = 8.5 A DS(on) GS D ringing of DC/DC converters using either synchronous or MSL1 robust package design conventional switching PWM controllers.It has been optimized for low gate charge, low r , fast switching speed and body DS(on) 100% UIL Tested diode reverse recovery performance. RoHS Compliant Applications Primary DC-DC Switch Motor Bridge Switch Synchronous Rectifier Bottom Top S Pin 1 D G S S S D S S D D D D G D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 22 C I -Continuous T = 25 C (Note 1a) 10.7 A D A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 60 mJ AS Power Dissipation T = 25 C 40 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.1 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86320 FDMC86320 Power 33 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC86320 Rev.C2