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FDMC86570L N-Channel Shielded Gate PowerTrench MOSFET March 2015 FDMC86570L N-Channel Shielded Gate PowerTrench MOSFET 60 V, 84 A, 4.3 m Features Shielded Gate MOSFET Technology General Description Max r = 4.3 m at V = 10 V, I = 18 A DS(on) GS D This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 6.5 m at V = 4.5 V, I = 15 A DS(on) GS D incorporates Shielded Gate technology. This process has been High performance technology for extremely low r DS(on) optimized for the on-state resistance and yet maintain superior switching performance. Termination is Lead-free Application RoHS Compliant DC-DC Conversion Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 84 C -Continuous T = 100 C (Note 5) 53 C I A D -Continuous T = 25 C (Note 1a) 18 A -Pulsed (Note 4) 416 E Single Pulse Avalanche Energy (Note 3) 253 mJ AS Power Dissipation T = 25 C 54 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.3 JC C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86570L FDMC86570L Power33 13 12 mm 3000 units 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC86570L Rev. 1.2