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FDMC86160 N-Channel Shielded Gate PowerTrench MOSFET September 2014 FDMC86160 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 14 m at V = 10 V, I = 9 A DS(on) GS D incorporates Shielded Gate technology. This process has been Max r = 23 m at V = 6 V, I = 7 A optimized for the on-state resistance. This device is well suited DS(on) GS D for applications where ulta low R is required in small DS on High performance technology for extremely low r DS(on) spaces such as High performance VRM, POL and orring Termination is Lead-free and RoHS Compliant functions. Applications Bridge Topologies Synchronous Rectifier Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 43 C I -Continuous T = 25 C (Note 1a) 9 A D A -Pulsed (Note 4) 50 E Single Pulse Avalanche Energy (Note 3) 181 mJ AS Power Dissipation T = 25 C 54 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 2.3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86160 FDMC86160 Power33 13 12 mm 3000 units 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC86160 Rev. C4