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FDMC86260ET150 N-Channel Power Trench MOSFET January 2015 FDMC86260ET150 N-Channel Power Trench MOSFET 150 V, 25 A, 34 m Features General Description Extended T rating to 175C This N-Channel MOSFET is produced using Fairchild J Semiconductors advanced Power Trench process that has Max r = 34 m at V = 10 V, I = 5.4 A DS(on) GS D been especially tailored to minimize the on-state resistance and Max r = 44 m at V = 6 V, I = 4.8 A yet maintain superior switching performance. DS(on) GS D High performance technology for extremely low r DS(on) Application 100% UIL Tested DC-DC Conversion Termination is Lead-free RoHS Compliant Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 25 C -Continuous T = 100 C (Note 5) 18 C I A D -Continuous T = 25 C (Note 1a) 5.4 A -Pulsed (Note 4) 116 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25 C 65 C P W D Power Dissipation T = 25 C (Note 1a) 2.8 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 2.3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86260ET FDMC86260ET150 Power33 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC86260ET150 Rev. 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