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FDMC86261P P-Channel PowerTrench MOSFET June 2014 FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m Features General Description Max r = 160 m at V = -10 V, I = -2.4 A This P-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench technology. This Max r = 185 m at V = -6 V, I = -2.2 A DS(on) GS D very high density process is especially tailored to minimize Very low RDS-on mid voltage P channel silicon technology on-state resistance and optimized for superior switching optimised for low Qg performance. This product is optimised for fast switching applications as Applications well as load switch applications Active Clamp Switch 100% UIL Tested Load Switch RoHS Compliant Top Bottom Pin 1 D S S S S S D G S D D G D D D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -150 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous T = 25 C -9 C I -Continuous T = 25 C (Note 1a) -2.7 A D A -Pulsed -20 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25 C 40 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to + 150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.1 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86261P FDMC86261P Power 33 13 12 mm 3000 units 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC86261P Rev.C3