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FDMC86262P P-Channel PowerTrench MOSFET April 2015 FDMC86262P P-Channel PowerTrench MOSFET -150 V, -2 A, 307 m Features General Description This P-Channel MOSFET is produced using Fairchild Max r = 307 m at V = -10 V, I = -2 A DS(on) GS D Semiconductors advanced PowerTrench technology. This Max r = 356 m at V = -6 V, I = -1.8 A DS(on) GS D very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching Very Low r Mid Voltage P-Channel Silicon Technology DS(on) performance. Optimised for Low Qg Optimised for Fast Switching Applications as well as Load Applications Switch Applications Active Clamp Switch 100% UIL Tested Load Switch RoHS Compliant Bottom Top S D Pin 1 G S S S D S S D D D D G D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter Ratings Units V Drain to Source Voltage -150 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous T = 25C (Note 5) -8.4 C -Continuous T = 100C (Note 5) -5.3 C I A D -Continuous T = 25C (Note 1a) -2 A -Pulsed (Note 4) -35 E Single Pulse Avalanche Energy (Note 3) 37 mJ AS Power Dissipation T = 25C 40 C P W D Power Dissipation T = 25C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case 3.1 JC C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86262P FDMC86262P Power 33 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC86262P Rev.1.0