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FDMC8097AC Dual N & P-Channel PowerTrench MOSFET August 2015 FDMC8097AC Dual N & P-Channel PowerTrench MOSFET N-Channel: 150 V, 2.4 A, 155 m P-Channel: -150 V, -0.9 A, 1200 m Features General Description These dual N and P-Channel enhancement mode Power Q1: N-Channel MOSFETs are produced using Fairchild Semiconductors Max r = 155 m at V = 10 V, I = 2.4 A DS(on) GS D advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Max r = 212 m at V = 6 V, I = 2 A DS(on) GS D superior switching performance. Shrinking the area needed for implementation of active clamp topology enabling best in class Q2: P-Channel power density. Max r = 1200 m at V = -10 V, I = -0.9 A DS(on) GS D Applications Max r = 1400 m at V = -6 V, I = -0.8 A DS(on) GS D Optimised for active clamp forward converters DC-DC Converter Active Clamp RoHS Compliant Top Bottom Pin 1 G1 S1 S1 S1 G2 G1 D1 S2 S1 D2 S2 S1 S1 S2 S2 S2 G2 S2 Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 150 -150 V DS V Gate to Source Voltage 20 25 V GS Drain Current -Continuous T = 25 C (Note 5) 6.3 -2.0 C -Continuous T = 100 C (Note 5) 3.9 -1.2 C I A D 1a 1b -Continuous T = 25 C 2.4 -0.9 A -Pulsed (Note 4) 33 -8.8 E Single Pulse Avalanche Energy (Note 3) 24 6 mJ AS 1a 1b Power Dissipation for Single Operation T = 25 C 1.9 1.9 A W 1c 1d P Power Dissipation for Single Operation T = 25 C 0.8 0.8 D A Power Dissipation for Single Operation T = 25 C 14 10 C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction-to-Ambient 65 65 JA 1c 1d R Thermal Resistance, Junction-to-Ambient 155 155 C/W JA R Thermal Resistance, Junction-to-Case 8.9 12.5 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8097AC FDMC8097AC Power 33 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC8097AC Rev.1.0