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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC8200 Dual N-Channel PowerTrench MOSFET June 2014 FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 m and 20 m Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max r = 20 m at V = 10 V, I = 6 A DS(on) GS D has been internally connected to enable easy placement and Max r = 32 m at V = 4.5 V, I = 5 A DS(on) GS D routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been Q2: N-Channel designed to provide optimal power efficiency. Max r = 9.5 m at V = 10 V, I = 9 A DS(on) GS D Max r = 13.5 m at V = 4.5 V, I = 7 A DS(on) GS D Applications RoHS Compliant Mobile Computing Mobile Internet Devices General Purpose Point of Load D1 D1 Q2Q2 D1 S2 D1 55 44 Pin 1 G1 D1 D1 S2 66 33 D2/S1 S2 D1 77 22 S2 G1 G2 88 11 S2 Q1Q1 S2 G2 BOTTOM BOTTOM Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) 20 20 V GS Drain Current - Continuous (Package limited) T = 25 C 18 18 C - Continuous (Silicon limited) T = 25 C 23 45 C I A D 1a 1b - Continuous T = 25 C 8 12 A - Pulsed 40 40 1a 1b Power Dissipation T = 25 C 1.9 2.2 A P W D 1c 1d Power Dissipation T = 25 C 0.7 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 65 55 JA 1c 1d R Thermal Resistance, Junction to Ambient 180 145 C/W JA R Thermal Resistance, Junction to Case 7.5 4 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8200 FDMC8200 Power 33 13 12 mm 3000 units 2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC8200 Rev.A2 VV VV VV GG IINN IINN IINN HHSS VV IINN GGNNDD GGNNDD GGNNDD GG LLSS SSWWIITTCCHH NNOODDEE