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FDMC8360L N-Channel Shielded Gate Power Trench MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 2.1 m at V = 10 V, I = 27 A DS(on) GS D incorporates Shielded Gate technology. This process has been Max r = 3.1 m at V = 4.5 V, I = 22 A optimized for the on-state resistance and yet maintain superior DS(on) GS D switching performance. High performance technology for extremely low r DS(on) Termination is Lead-free Application 100% UIL Tested DC-DC Conversion RoHS Compliant Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 80 C I -Continuous T = 25 C (Note 1a) 27 A D A -Pulsed (Note 4) 240 E Single Pulse Avalanche Energy (Note 3) 294 mJ AS Power Dissipation T = 25 C 54 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 2.3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8360L FDMC8360L Power33 13 12 mm 3000 units 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC8360L Rev. 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