X-On Electronics has gained recognition as a prominent supplier of FDMC8554 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMC8554 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDMC8554 ON Semiconductor

FDMC8554 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDMC8554
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20V N-CH PowerTrench MOSFET
Datasheet: FDMC8554 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.4674 ea
Line Total: USD 3.47 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 1.0373
6000 : USD 1.0269
9000 : USD 1.0167
12000 : USD 1.0065
15000 : USD 0.9964
21000 : USD 0.9741
24000 : USD 0.9644
30000 : USD 0.9548
75000 : USD 0.9452

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.8045
6000 : USD 0.7449

0
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 2.6565
10 : USD 2.5858
30 : USD 2.5388
100 : USD 2.4892
500 : USD 2.4892

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 3.4674
10 : USD 1.2942
100 : USD 0.992
500 : USD 0.835
1000 : USD 0.6858
3000 : USD 0.6385

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6029
5 : USD 1.4452
15 : USD 1.0642
40 : USD 0.9985

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 14
Multiples : 1
14 : USD 0.7685
100 : USD 0.7231

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDMC8554 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMC8554 and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC8554 N-Channel PowerTrench MOSFET June 2014 FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5m Features General Description Max r = 5m at V = 10V, I = 16.5A This N-Channel MOSFET is a rugged gate version of DS(on) GS D Fairchild Semiconductors advanced Power Trench Max r = 6.4m at V = 4.5V, I = 14A DS(on) GS D process. It has been optimized for power management Low Profile - 1mm max in Power 33 applications. RoHS Compliant Application DC - DC Conversion Bottom Top Pin 1 G D 5 4 G S S S D 6 3 S D 7 S 2 D D D S D 8 1 D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25C 16.5 C I -Continuous T = 25C (Note 1a) 16.5 A D A -Pulsed 36 Power Dissipation T = 25C 41 C P W D Power Dissipation T = 25C (Note 1a) 2.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 60 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8554 FDMC8554 Power 33 7 8mm 3000 units 1 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMC8554 Rev.C2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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