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FDMC86012 N-Channel Power Trench MOSFET October 2012 FDMC86012 N-Channel Power Trench MOSFET 30 V, 88 A, 2.7 m Features General Description Max r = 2.7 m at V = 4.5 V, I = 23 A This device has been designed specifically to improve the DS(on) GS D efficiency of DC/DC converters. Using new techniques in Max r = 4.7 m at V = 2.5 V, I = 17.5 A DS(on) GS D MOSFET construction, the various components of gate charge High performance technology for extremely low r and capacitance have been optimized to reduce switching DS(on) losses. Low gate resistance and very low Miller charge enable Termination is Lead-free excellent performance with both adaptive and fixed dead time 100% UIL Tested gate drive circuits. Very low r has been maintained to DS(on) provide a sub logic-level device. RoHS Compliant Applications 3.3 V input synchronous buck switch Synchronous rectifier Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 12 V GS Drain Current -Continuous T = 25 C 88 C I -Continuous T = 25 C (Note 1a) 23 A D A -Pulsed (Note 4) 230 E Single Pulse Avalanche Energy (Note 3) 337 mJ AS Power Dissipation T = 25 C 54 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics Thermal Resistance, Junction to Case (Note 1) 2.3 R JC C/W Thermal Resistance, Junction to Ambient (Note 1a) 53 R JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86012 FDMC86012 Power33 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC86012 Rev. C