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FDMC7696 N-Channel PowerTrench MOSFET January 2015 FDMC7696 N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max r = 11.5 m at V = 10 V, I = 12 A DS(on) GS D Semiconductors advanced Power Trench process that has Max r = 14.5 m at V = 4.5 V, I = 10 A DS(on) GS D been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching High performance technology for extremely low r DS(on) applications common in Notebook Computers and Portable Termination is Lead-free and RoHS Compliant Battery Packs. Applications DC/DC Buck Converters Notebook battery power management Load Switch in Notebook Bottom Top D D D D 8 7 6 5 5 4 G D D 6 S 3 D 7 2 S 8 1 S D G S S S 1 2 3 4 Pin 1 MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Drain to Source Transient Voltage ( t < 100 ns) 33 V DSt Transient V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25C 20 C -Continuous (Silicon limited) T = 25C 38 C I A D -Continuous T = 25C (Note 1a) 12 A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 21 mJ AS Power Dissipation T = 25C 25 C P W D Power Dissipation T = 25C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 5.0 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7696 FDMC7696 MLP 3.3x3.3 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC7696 Rev.C12