FDMC8010ET30 MOSFET N-Channel, POWERTRENCH 30 V, 174 A, 1.3 m General Description www.onsemi.com This NChannel MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that has been especially tailored Pin 1 Pin 1 S S to minimize the onstate resistance. This device is well suited for S G applications where ultra low r is required in small spaces such as DS(on) High performance VRM, POL and Oring functions. D D D D Features Top Bottom Extended T Rating to 175C J PQFN8 3.3x3.3, 0.65P Max r = 1.3 m at V = 10 V, I = 30 A DS(on) GS D CASE 483AW Max r = 1.8 m at V = 4.5 V, I = 25 A Power 33 DS(on) GS D High Performance Technology for Extremely Low r DS(on) These Devices are PbFree and are RoHS Compliant MARKING DIAGRAM Applications DC DC Buck Converters Point of Load Y&Z&3&K FDMC High Efficiency Load Switch and Low Side Switching 8010ET Oring FET MOSFET MAXIMUM RATINGS (T = 25C Unless Otherwise Noted) A Symbol Parameter Ratings Units Y = ON Semiconductor Logo VDS Drain to Source Voltage 30 V &Z = Assembly Plant Code VGS Gate to Source Volage (Note 4) 20 V &3 = Numeric Date Code &K = Lot Code I Drain Current A D FDMC8010ET = Specific Device Code Continuous T = 25C (Note 6) 174 C Continuous T = 100C (Note 6) 123 C Continuous T = 25C (Note 1a) 30 A Pulsed (Note 5) 835 EAS Single Pulse Avalance Energy (Note 3) 153 mJ S D P 65 W Power Dissipation T = 25C D C S D Power Dissipation T = 25C (Note 1a) 2.8 A TJ, TSTG Operating and Storage Junction Temperature 55 to C S D Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the G D device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ORDERING INFORMATION Symbol Parameter Ratings Unit See detailed ordering, marking and shipping information in the package dimensions section on page 2 of this data sheet. RJC Thermal Resistance, Junction to Case 1.3 C/W RJA Thermal Resistance, Junction to Ambient 53 C/W (Note 1a) Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 2 FDMC8010ET30/DFDMC8010ET30 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDMC8010ET FDMC8010ET30 Power 33 13 12 mm 3000 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 1 mA, V = 0 V 30 V DSS D GS BV / T Breakdown Voltage Temperature I = 1 mA, referenced to 25C 15 mV/C DSS J D Coefficient I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 1 mA 1.2 1.5 2.5 V GS(th) GS DS D V T Gate to Source Threshold Voltage I = 1 mA, referenced to 25C 5 mV/C GS(th) J D Temperature Coefficient r Static Drain to Source On Resistance m V = 10 V, I = 30 A 0.9 1.3 DS(on) GS D V = 4.5 V, I = 25 A 1.3 1.8 GS D V = 10 V, I = 30 A, T = 125C 1.3 2 GS D J g Forward Transconductance V = 5 V, I = 30 A 188 S FS DS D DYNAMIC CHARACTERISTICS V = 15 V, V = 0 V, C Input Capacitance 4405 5860 pF iss DS GS f = 1 MHz C Output Capacitance 1570 2090 pF oss C Reverse Transfer Capacitance 167 250 pF rss R Gate Resistance 0.1 0.5 1.25 g SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 15 V, I = 30 A, V = 10 V, 15 27 ns DD D GS d(on) R = 6 GEN t Rise Time 7.5 15 ns r t TurnOff Delay Time 40 64 ns d(off) t Fall Time 5.3 11 ns f V = 15 V Q Total Gate Charge V = 0 V to 10 V 67 94 nC g GS DD I = 30 A D Q Total Gate Charge V = 0 V to 4.5 V 32 45 nC g GS Qgs Gate to Source Charge 10 nC Qgd Gate to Drain Miller Charge 9.5 nC DRAINSOURCE DIODE CHARACTERISTICS V Source to Drain Diode Forward Voltage V = 0 V, I = 2 A (Note 2) V 0.6 1.2 SD GS S V = 0 V, I = 30 A (Note 2) 0.7 1.2 GS S t I = 30 A, di/dt = 100 A/ s Reverse Recovery Time 49 78 ns rr F Q Reverse Recovery Charge 29 46 nC rr www.onsemi.com 2