FDMC8032L Dual N-Channel PowerTrench MOSFET 40 V, 7 A, 20 m www.onsemi.com General Description This device includes two 40 V NChannel MOSFETs in a dual G2 G1 Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance. S1 S2 Features Max r = 20 m at V = 10 V, I = 7 A DS(on) GS D S2 S1 Max r = 27 m at V = 4.5 V, I = 6 A DS(on) GS D Low Inductance Packaging Shortens Rise/Fall Times S1 S2 Lower Switching Losses 100% Rg Tested This Device is PbFree and is RoHS Compliant Pin 1 Pin 1 G1 S1 S1S1 Applications Battery Protection D1 Load Switching Point of Load D2 MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A S2S2 G2 S2 Symbol Parameter Ratings Units Power 33 VDS Drain to Source Voltage 40 V WDFN8 3x3, 0.65P VGS Gate to Source Voltage 20 V CASE 511DG I A Drain Current 20 D Continuous T = 25C C 7 Continuous T = 25C (Note 1a) A MARKING DIAGRAM Pulsed (Note 4) 50 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ Y&Z&2&K Power Dissipation T = 25C 12 FDMC C P W D 8032L Power Dissipation T = 25C (Note 1a) 1.9 A TJ, TSTG Operating and Storage Junction Temperature 55 to C Range +150 Y = ON Semiconductor Logo Stresses exceeding those listed in the Maximum Ratings table may damage the &Z = Assembly Plant Code device. If any of these limits are exceeded, device functionality should not be &2 = Numeric Date Code assumed, damage may occur and reliability may be affected. &K = Lot Code FDMC8032L = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: February, 2019 Rev. 4 FDMC8032L/DFDMC8032L THERMAL CHARACTERISTICS Rating Symbol Value Unit C/W R Thermal Resistance, Junction to Case 9.7 JC R Thermal Resistance, Junction to Ambient (Note 1a) 65 JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDMC8032L FDMC8032L Power 33 13 12 mm 3000 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Test Conditions Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage I = 250 A, V = 0 V 40 V D GS BV Breakdown Voltage Temperature Coefficient I = 250 A, referenced to 25C 23 mV/C D DSS T J IDSS Zero Gate Voltage Drain Current V = 32 V, V = 0 V 1 A DS GS IGSS Gate to Source Leakage Current, Forward V = 20 V, V = 0 V 100 nA GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 1.0 1.8 3.0 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 250 A, referenced to 25C 5 mV/C GS(th) D T Temperature Coefficient J r Static Drain to Source On Resistance m DS(on) V = 10 V, I = 7 A 16 20 GS D V = 4.5 V, I = 6 A 21 27 GS D V = 10 V, I = 7 A, T = 125C GS D J 23 29 g Forward Transconductance V = 5 V, I = 7 A 27 S FS DD D DYNAMIC CHARACTERISTICS C Input Capacitance V = 20 V, V = 0 V 513 720 pF iss DS GS f = 1 MHz C Output Capacitance 137 195 pF oss C Reverse Transfer Capacitance 9.3 15 pF rss R Gate Resistance 0.1 2.6 3.6 g SWITCHING CHARACTERISTICS V = 20 V, I = 7 A t TurnOn Delay Time 5.5 11 ns d(on) DD D V = 10 V, GS t Rise Time 1.2 10 ns R = 6 r GEN t TurnOff Delay Time 13 24 ns d(off) t Fall Time 1.3 10 ns f Q Total Gate Charge V = 0 V to 10 V 7.6 11 nC g(TOT) GS Total Gate Charge V = 0 V to 4.5 V 3.6 5.1 nC GS V = 20 V Q Gate to Source Charge 1.5 nC gs DD I = 7 A D Q Gate to Drain Miller Charge 1.0 nC gd www.onsemi.com 2