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This advanced process technol- 100% Avalanche Tested ogy achieves the lowest possible on-resistance per silicon area, RoHS compliant resulting in outstanding performance.This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Bottom Top Pin 1 D 5 4 G G S S D 6 3 S S D 7 S 2 D D S D D 8 1 D MLP 3.3x3.3 o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDMC15N06 Unit V Drain to Source Voltage 55 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C) 15 C A o I Drain Current - Continuous (T = 100 C) 9 D C o - Continuous (T = 25 C) (Note 1a) 2.4 A A I Drain Current - Pulsed (Note 2) 60 A DM E Single Pulsed Avalanche Energy (Note 3) 36 mJ AS I Avalanche Current 15 A AR E Repetitive Avalanche Energy 3.5 mJ AR o (T = 25 C) 35 W C P Power Dissipation D o (T = 25 C) 2.3 W A o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FDMC15N06 Unit R Thermal Resistance, Junction to Case, Max. 3.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. (Note 1a) 53 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC15N06 Rev. C2