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TM FDMC7572S N-Channel Power Trench SyncFET August 2011 FDMC7572S TM N-Channel Power Trench SyncFET 25 V, 40 A, 3.15 m Features General Description Max r = 3.15 m at V = 10 V, I = 22.5 A The FDMC7572S has been designed to minimize losses in DS(on) GS D power conversion application. Advancements in both silicon and Max r = 4.7 m at V = 4.5 V, I = 18 A DS(on) GS D package technologies have been combined to offer the lowest Advanced Package and Silicon combination for low r r while maintaining excellent switching performance. This DS(on) DS(on) and high efficiency device has the added benefit of an efficient monolithic Schottky body diode. SyncFET Schottky Body Diode Applications 100% UIL Tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 S D G 5 4 S S D S G 6 3 D S 7 2 D S D D 8 1 D D Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 40 C -Continuous (Silicon limited) T = 25 C 103 C I A D -Continuous T = 25 C (Note 1a) 22.5 A -Pulsed 120 E Single Pulse Avalanche Energy (Note 3) 84 mJ AS Power Dissipation T = 25 C 52 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.4 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7572S FDMC7572S Power 33 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC7572S Rev.C1