MOSFET N-Channel, UniFET 75 V, 210 A, 5.5 m FDH210N08 Description www.onsemi.com UniFET MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce onstate resistance, and to provide better switching performance and higher avalanche energy strength. V R MAX I MAX DSS DS(ON) D This device family is suitable for switching power converter 75 V 5.5 m 210 A applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D Features R = 4.65 m (Typ.), V = 10 V, I = 125 A DS(ON) GS D Low Gate Charge (Typ. 232 nC) G Low C (Typ. 262 pF) rss S 100% Avalanche Tested Improved dv/dt Capability This Device is PbFree and is RoHS Compliant Applications Synchronous Rectification for ATX / Server / Telecom PSU G Battery Protection Circuit D S Motor Drives and Uninterruptible Power Supplies TO2473 CASE 340CK MARKING DIAGRAM Y&Z&3&K FDH 210N08 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDH210N08 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: December, 2019 Rev. 3 FDH210N08/DFDH210N08 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V DrainSource Voltage 75 V DSS I Drain Current Continuous (T = 25C) 210 A D C Continuous (T = 100C) 132 C I Drain Current Pulsed (Note 1) 840 A DM V GateSource Voltage 20 V GSS E Single Pulsed Avalanche Energy (Note 2) 9375 mJ AS I Avalanche Current (Note 1) 210 A AR E Repetitive Avalanche Energy (Note 1) 46.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 462 W D C Derate Above 25C 3.7 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG T Maximum Lead Temperature for Soldering, 300 C L 1/8 from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. L = 0.4 mH, I = 125 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 125 A, di/dt 260 A/ s, V BV , starting T = 25C. SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter FDH210N08 Unit R Thermal Resistance, Junction to Case, Max. 0.27 C/W JC Thermal Resistance, Junction to Ambient, Max. 40 R C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Part Number Top Mark Package Method Reel Size Tape Width Quantity FDH210N08 FDH210N08 TO247 Tube N/A N/A 30 Units www.onsemi.com 2