ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDFS2P106A FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode Features General Description 3.0 A, 60V R = 110 m V = 10 V DS(ON) GS The FDFS2P106A combines the exceptional R = 140 m V = 4.5 V DS(ON) GS performance of ON Semiconductor s PowerTrench MOSFET technology with a very low forward V < 0.45 V 1 A (T = 125C) J F voltage drop Schottky barrier rectifier in an SO-8 V < 0.53 V 1 A F package. V < 0.62 V 2 A F This device is designed specifically as a single package solution for DC to DC converters. It features a fast Schottky and MOSFET incorporated into single switching, low gate charge MOSFET with very low on- power surface mount SO-8 package state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC Electrically independent Schottky and MOSFET converter topologies. pinout for design flexibility D D 1 8 A C C C 2 7 A C 3 6 S D G SO-8 S G 4 5 D A Pin 1 A o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V MOSFET Drain-Source Voltage V DSS 60 V MOSFET Gate-Source Voltage 20 V GSS I Drain Current Continuous (Note 1a) A D 3 Pulsed 10 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range C J STG 55 to +150 V Schottky Repetitive Peak Reverse Voltage 45 V RRM I Schottky Average Forward Current (Note 1a) 1 A O Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDFS2P106A FDFS2P106A 13 12mm 2500 units 2001 Semiconductor Components Industries, LLC. Publication Order Number: FDFS2P106A/D September-2017, Rev. 2