FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode July 2014 FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120m Features General Description This device is designed specifically as a single package solution MOSFET: for the battery charge switch in cellular handset and other ultra- Max r = 120m at V = 4.5V, I = 3.0A DS(on) GS D portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage Max r = 160m at V = 2.5V, I = 2.5A DS(on) GS D schottky diode for minimum conduction losses. Max r = 240m at V = 1.8V, I = 1.0A DS(on) GS D The MicroFET 2x2 package offers exceptional thermal Schottky: performance for its physical size and is well suited to linear mode applications. V < 0.54V 1A F Low profile - 0.8 mm maximum - in the new pack- age MicroFET 2x2 mm RoHS Compliant Pin 1 D A NC A 6 C 1 G NC 5 2 4 D 3 S C S G MicroFET 2x2 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DSS V Gate to Source Voltage 8 V GSS Drain Current -Continuous (Note 1a) 3 I A D -Pulsed 6 Power Dissipation (Note 1a) 1.4 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG V Schottky Repetitive Peak Reverse Voltage 30 V RRM I Schottky Average Forward Current 1 A O Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 86 JA R Thermal Resistance, Junction to Ambient (Note 1b) 173 JA C/W R Thermal Resistance, Junction to Ambient (Note 1c) 86 JA R Thermal Resistance, Junction to Ambient (Note 1d) 140 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .857 FDFMA2P857 MicroFET 2x2 7 8mm 3000 units 1 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FDFMA2P857 Rev.B2 FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 250A, V = 0V 20 V DSS D GS BV Breakdown Voltage Temperature DSS I = 250A, referenced to 25C 12 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = 16V, V = 0V 1 A DSS DS GS I Gate to Source Leakage Current V = 8V, V = 0V 100 nA GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250A 0.4 0.7 1.3 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 250A, referenced to 25C 2 mV/C D T Temperature Coefficient J V = 4.5V, I = 3.0A 90 120 GS D V = 2.5V, I = 2.5A 120 160 m GS D r Static Drain to Source On Resistance DS(on) V = 1.8V, I = 1.0A 172 240 GS D V = 4.5V, I = 3.0A, T = 125C 118 160 GS D J g Forward Transconductance V = 5V, I = 3.0A 7 S FS DS D Dynamic Characteristics C Input Capacitance 435 pF iss V = 10V, V = 0V, DS GS C Output Capacitance 80 pF oss f = 1.0MHz C Reverse Transfer Capacitance 45 pF rss Switching Characteristics t Turn-On Delay Time 9 18 ns d(on) V = 10V, I = 1A DD D t Rise Time 11 19 ns r V = 4.5V, R = 6 GS GEN t Turn-Off Delay Time 15 27 ns d(off) t Fall Time 6 12 ns f Q Total Gate Charge 4 6 nC g(TOT) V = 10V I = 3.0A DS D Q Gate to Source Gate Charge V = 4.5V 0.8 nC gs GS Q Gate to Drain Miller Charge 0.9 nC gd Drain-Source Diode Characteristics I Maximum Continuous Drain-Source Diode Forward Current 1.1 A S V Source to Drain Diode Forward Voltage V = 0V, I = 1.1A (Note 2) 0.8 1.2 V SD GS S t Reverse Recovery Time 17 ns rr I = 3.0A, di/dt = 100A/s F Q Reverse Recovery Charge 6 nC rr Schottky Diode Characteristics T = 25C 0.5 4.5 A J I Reverse Leakage V = 10V T = 85C 0.05 1.0 mA R R J T = 125C 0.6 8.4 mA J T = 25C 1.1 8.0 A J I Reverse Leakage V = 20V T = 85C 0.09 1.6 mA R R J T = 125C 0.9 10 mA J T = 25C 0.37 0.40 V J V Forward Voltage I = 100mA T = 85C 0.29 0.35 V F F J T = 125C 0.23 0.29 V J T = 25C 0.5 0.54 V J V Forward Voltage I = 1A T = 85C 0.46 0.51 V F F J T = 125C 0.43 0.48 V J www.fairchildsemi.com FDFMA2P857 Rev.B2 2