X-On Electronics has gained recognition as a prominent supplier of STD14NM50NAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD14NM50NAG MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD14NM50NAG STMicroelectronics

STD14NM50NAG electronic component of STMicroelectronics
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Part No.STD14NM50NAG
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET Automotive-grade N-channel 500 V 0.28 Ohm typ. 12 A MDmesh II Power MOSFET in a DPAK package
Datasheet: STD14NM50NAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4521 ea
Line Total: USD 2.45 
Availability - 4850
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4850
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 2.4521
10 : USD 1.8446
25 : USD 1.8261
50 : USD 1.8079
100 : USD 1.3229
250 : USD 1.3099
500 : USD 1.1505
1000 : USD 1.0113

29
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0513
10 : USD 2.0094
30 : USD 1.9807
100 : USD 1.7079

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STD14NM50NAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD14NM50NAG and other electronic components in the MOSFETs category and beyond.

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STD14NM50NAG Datasheet Automotive-grade N-channel 500 V, 0.285 typ., 12 A MDmesh II Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on) D STD14NM50NAG 500 V 0.320 12 A 3 2 1 DPAK AEC-Q101 qualified 100% avalanche tested D(2, TAB) Low input capacitance and gate charge Low gate input resistance Applications G(1) Switching applications Description S(3) AM01475v1 noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STD14NM50NAG Product summary Order code STD14NM50NAG Marking 14NM50N Package DPAK Packing Tape and reel DS12786 - Rev 2 - March 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD14NM50NAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 500 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 12 A D C I Drain current (continuous) at T = 100 C 8 A D C (1) I Drain current (pulsed) 48 A DM P Total power dissipation at T = 25 C 90 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 12 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.39 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 4 A AR (pulse width limited by T max) j Single pulse avalanche energy E 172 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AS DD DS12786 - Rev 2 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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