DMNH3010LK3
Green
175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Max
D Rated to +175C Ideal for High Ambient Temperature
BV R Max
DSS DS(ON)
T = +25C
C
Environments
55A
9.5m @ V = 10V
GS
100% Unclamped Inductive Switch (UIS) test in production
30V
11.5m @ V = 4.5V 50A
GS
Low On-Resistance
Fast Switching Speed
Description
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
This new generation MOSFET has been designed to minimize the on-
Qualified to AEC-Q101 Standards for High Reliability
state resistance (R ) and yet maintain superior switching
DS(ON)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: TO252 (DPAK)
Applications
Case Material: Molded Plastic, Green Molding Compound. UL
Backlighting
Flammability Classification Rating 94V-0
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Power Management Functions
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Finish Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
e3
Weight: 0.33 grams (Approximate)
Equivalent Circuit
Top View Pin Out Top View
Ordering Information (Note 4)
Part Number Case Packaging
DMNH3010LK3-13 TO252 (DPAK) 2500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH3010LK3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T = +25C 55
C
I A
D
State 40
T = +100C
C
Continuous Drain Current (Note 6) V = 10V
GS
Steady T = +25C 15
A
A
I
D
State 10.6
T = +100C
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 100 A
DM
Avalanche Current (Note 7) L = 0.8mH I 15 A
AS
Avalanche Energy (Note 7) L = 0.8mH E 75 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 2.0 W
D
Steady State 74 C/W
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
t<10s 31 C/W
Total Power Dissipation (Note 6) P 3.2 W
D
Steady State 47 C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 21 C/W
Thermal Resistance, Junction to Case (Note 6) R 2.5 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 30 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 30V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250A
GS(TH) DS GS D
8 9.5 V = 10V, I = 18A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
10 11.5 V = 4.5V, I = 16A
GS D
Diode Forward Voltage V 0.75 1.0 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 2075
Ciss
V = 15V, V = 0V,
DS GS
190
Output Capacitance pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 138
C
rss
Gate Resistance 2.4
R V = 0V, V = 0V, f = 1.0MHz
g DS GS
16.1
Total Gate Charge (V = 4.5V) Q
GS g
37
Total Gate Charge (V = 10V) Q
GS g
nC V = 15V, I = 18A
DS D
6.1
Gate-Source Charge Q
gs
5.9
Gate-Drain Charge Q
gd
4.5
Turn-On Delay Time t
D(ON)
19.6
Turn-On Rise Time t
R V = 15V, V = 10V,
DS GS
ns
31
Turn-Off Delay Time t R = 0.83, R = 3
D(OFF) L GEN
10.7
Turn-Off Fall Time
t
F
Reverse Recovery Time 13.7 ns
t
RR
I =15A, di/dt=500A/s
F
Reverse Recovery Charge 18.3 nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
DMNH3010LK3 January 2016
Diodes Incorporated
www.diodes.com
Document number: DS38455 Rev. 2 - 2