DMP2040UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications I max D 2 BV R max DSS DS(ON) PCB Footprint of 4mm T = +25C C Low Gate Threshold Voltage 32m V = -4.5V -13A GS Low On-Resistance -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 53m V = -2.5V -10A GS Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: U-DFN2020-6 (Type F) (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. UL ideal for high efficiency power management applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Battery Management Application Terminals: Finish NiPdAu over Copper Leadframe. Solderable Power Management Functions e4 per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type F) D G Pin1 S Pin Out Equivalent Circuit Top View Bottom View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP2040UFDF-7 U-DFN2020-6 (Type F) 3,000/Tape & Reel DMP2040UFDF-13 U-DFN2020-6 (Type F) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2040UFDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units -20 Drain-Source Voltage V V DSS 12 Gate-Source Voltage V V GSS Steady T = +25C -6.1 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -4.9 T = +70C A Steady T = +25C -13 C A Continuous Drain Current (Note 7) V = -4.5V I GS D State -10 T = +70C C Pulsed Drain Current (10s pulse, duty cycle = 1%) I A DM Continuous Source-Drain Diode Current (Note 6) A I S Avalanche Current (Note 8) L = 0.1mH I -17 A AS Avalanche Energy (Note 8) L = 0.1mH E 14 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 0.8 W T = +25C P A D Steady State 149 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 95 Total Power Dissipation (Note 6) 1.8 W T = +25C P A D Steady State 70 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 45 Thermal Resistance, Junction to Case (Note 7) Steady State 16 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -16V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -0.6 -1.5 V V = V , I = -250A GS(TH) DS GS D 22 32 V = -4.5V, I = -8.9A GS D Static Drain-Source On-Resistance R m DS(ON) 31 53 V = -2.5V, I = -6.9A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -2.9A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C iss V = -10V, V = 0V, DS GS Output Capacitance pF C oss f = 1.0MHz Reverse Transfer Capacitance C rss Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = -4.5V) Q GS g Total Gate Charge (V = -8V) Q GS g nC V = -6V, I = -8.9A DS D Gate-Source Charge Q gs Gate-Drain Charge Qgd Turn-On Delay Time tD(ON) Turn-On Rise Time t V = -6V, R = 6 R DD L ns Turn-Off Delay Time V = -4.5V, R = 6, I = -1A t GS G D D(OFF) Turn-Off Fall Time t F Body Diode Reverse Recovery Time ns t I = -8.9A, di/dt = -100A/s RR F Body Diode Reverse Recovery Charge Q nC I = -8.9A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2040UFDF August 2016 Diodes Incorporated www.diodes.com Document number: DS38984 Rev. 1 - 2