Green DMT6009LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features I 100% Unclamped Inductive Switching Ensures More Reliable D BV R Max DSS DS(ON) T = +25C C and Robust End Application 87A 10m V = 10V GS Low R Minimizes Power Losses DS(ON) 60V 79A 12m VGS = 4.5V Low Q Minimizes Switching Losses G Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 5060-8 (R ), yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 High Frequency Switching Terminal Finish Matte Tin Annealed over Copper Leadframe. Sync. Rectification Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.097 grams (Approximate) PowerDI5060-8 S D Pin1 S D D S D G Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT6009LPS-13 PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT6009LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage 16 V V GSS T = +25C 10.6 A Continuous Drain Current (Note 5) I A D 9.1 T = +70C A T = +25C 87 C Continuous Drain Current (Note 6) A I D T = +70C 69 C Maximum Continuous Body Diode Forward Current (Note 6) 100 A IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 160 A I DM Avalanche Current, L=0.1mH 20.3 A I AS Avalanche Energy, L=0.1mH 20.6 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 2.3 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 53 C/W R JA Total Power Dissipation (Note 6) 113 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) R 1.1 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.7 2 V V = V , I = 250A GS(TH) DS GS D 7.2 10 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) 8.9 12 V = 4.5V, I = 15A GS D Diode Forward Voltage 0.9 V VSD VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1,925 CISS V = 30V, V = 0V, DS GS Output Capacitance 438 pF C OSS f = 1MHz Reverse Transfer Capacitance 41 C RSS Gate Resistance 1.7 R V = 0V, V = 0V, f = 1MHz G DS GS 33.5 Total Gate Charge (V = 10V) Q GS G 15.6 Total Gate Charge (V = 4.5V) Q GS G nC V = 30V, I = 13.5A DS D 4.7 Gate-Source Charge Q GS 5.3 Gate-Drain Charge Q GD 4.5 Turn-On Delay Time t D(ON) 8.6 Turn-On Rise Time tR V = 30V, V = 10V, DD GS ns 35.9 Turn-Off Delay Time R = 6, I = 13.5A t G D D(OFF) Turn-Off Fall Time 15.7 t F Body Diode Reverse Recovery Time 18.2 ns t RR I = 13.5A, di/dt = 400A/s F Body Diode Reverse Recovery Charge 33.1 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT6009LPS May 2016 Diodes Incorporated www.diodes.com Document number: DS38369 Rev. 2 - 2