BUK9M52-40EX Nexperia

BUK9M52-40E N-channel 40 V, 52 m logic level MOSFET in LFPAK33 13 May 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 5 V; T = 25 C; Fig. 2 - - 17.6 A D GS mb P total power dissipation T = 25 C; Fig. 1 - - 31 W tot mb Static characteristics R drain-source on-state V = 5 V; I = 5 A; T = 25 C; Fig. 11 - 40.7 52 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 5 A; V = 32 V; V = 5 V; - 2 - nC GD D DS GS T = 25 C; Fig. 13; Fig. 14 j Scan or click this QR code to view the latest information for this product LFPAK33NXP Semiconductors BUK9M52-40E N-channel 40 V, 52 m logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S Source D 2 S Source G 3 S Source mbb076 S 4 G Gate mb D Mounting base; connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9M52-40E LFPAK33 Plastic single ended surface mounted package SOT1210 (LFPAK33); 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9M52-40E 95240E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage DC; T 175 C -10 10 V GS j Pulsed; T 175 C [1][2] -15 15 V j P total power dissipation T = 25 C; Fig. 1 - 31 W tot mb I drain current V = 5 V; T = 25 C; Fig. 2 - 17.6 A D GS mb V = 5 V; T = 100 C; Fig. 2 - 12.4 A GS mb I peak drain current pulsed; t 10 s; T = 25 C; Fig. 3 - 70 A DM p mb BUK9M52-40E All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved Product data sheet 13 May 2016 2 / 13