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FDMC6890NZ Dual N-Channel PowerTrench MOSFET October 2006 FDMC6890NZ tm Dual N-Channel PowerTrench MOSFET 20V, 4A, Q1:68m, Q2:100m Features General Description Q1: N-Channel FDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching Max r = 68m at V = 4.5V, I = 4A DS(on) GS D characteristics. Inside the Power 33 package features two Max r = 100m at V = 2.5V, I = 3A DS(on) GS D N-channel MOSFETs with low on-state resistance and low gate Q2: N-Channel charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from Max r = 100m at V = 4.5V, I = 4A DS(on) GS D unclamped voltage input. Max r = 150m at V = 2.5V, I = 2A DS(on) GS D Application Low gate Charge DC - DC Conversion RoHS Compliant Bottom Up G2 D2 S1 D1/S2 D2 G1 D1/S2 G2 4 3 D1/S2 D1 D2 D1/S2 5 2 S1 G1 1 6 G1 D1/S2 G2 S1 D1/S2 D2 Power 33 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 20 20 V DS V Gate to Source Voltage 12 12 V GS -Continuous 4 I A D -Pulsed 10 Power Dissipation (Steady State) Q1 (Note 1a) 1.92 P W D Power Dissipation (Steady State) Q2 1.78 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient Q1 (Note 1a) 65 JA C/W R Thermal Resistance, Junction to Ambient Q2 70 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 6890N FDMC6890NZ Power 33 7inch 8mm 3000 units 1 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMC6890NZ Rev.C