MOSFET - Power, Single P-Channel, POWERTRENCH 30 V, 6.8 A, 35 m FDMA530PZ General Description This device is designed specifically for battery charge or load www.onsemi.com switching in cellular handset and other ultraportable applications . It features a MOSFET with low on state resistance. The WDFN6 (MicroFET 2 2) package offers exceptional thermal Bottom Drain Contact performance for its physical size and is well suited to linear mode D 1 6 D applications. Features D 2 5 D Max r = 35 m at V = 10 V, I = 6.8 A DS(on) GS D 3 4 G S Max r = 65 m at V = 4.5 V, I = 5.0 A DS(on) GS D Low Profile 0.8 mm Maximum in the New Package WDFN6 (MicroFET 2 2 mm) HBM ESD Protection Level > 3k V Typical (Note 3) Pin 1 D G D Free from Halogenated Compounds and Antimony Oxides RoHS Compliant Drain Source MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit D D S V Drain to Source Voltage 30 V DS WDFN6 (MicroFET 2 x 2) V Gate to Source Voltage 25 V GS CASE 511CZ I Drain Current Continuous (Note 1a) 6.8 A D Pulsed 24 MARKING DIAGRAM P Power (Note 1a) 2.4 W D Dissipation (Note 1b) 0.9 &Z&2&K T , T Operating Junction and Storage 55 to C J STG 530 Temperature Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. &Z = Assembly Plant Code &2 = Date Code THERMAL CHARACTERITICS &K = Lot Code 530 = Specific Device Code Symbol Parameter Ratings Unit R Thermal Resistance, (Note 1a) 52 C/W JA Junction to Ambient ORDERING INFORMATION (Note 1b) 145 Device Device Package Shipping Marking 530 FDMA530PZ WDFN6 3000 Units/ (MicroFET 2x2) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: September, 2019 Rev. 4 FDMA530PZ/DFDMA530PZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 30 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, 23 mV/C DSS D Coefficient referenced to 25C T J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 25 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 1 2.1 3 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 250 A, 5.4 mV/C GS(th) D Temperature Coefficient referenced to 25C T J r Static Drain to Source on Resistance V = 10 V, I = 6.8 A 30 35 m DS(on) GS D V = 4.5 V, I = 5.0 A 52 65 GS D V = 10 V, I = 6.8 A, 43 63 GS D T = 125C J g Forward Transconductance V = 10 V, I = 6.8 A 17 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 15 V, V = 0 V, 805 1070 pF iss DS GS f = 1 MHz C Output Capacitance 155 210 oss C Reverse Transfer Capacitance 130 195 rss R Gate Resistance 1 18 38 g SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 15 V, I = 6.8 A, 6 12 ns d(on) DD D V = 10 V, R = 6 GS GEN t Rise Time 21 34 r t TurnOff Delay Time 43 69 d(off) t Fall Time 31 50 f Q Total Gate Charge V = 10 V 16 24 nC g GS Q Total Gate Charge 9 11 g V = 5 V GS Q Gate to Source Gate Charge V = 15 V 3.1 gs DD I = 6.8 A D Q Gate to Drain Miller Charge 4.5 gd DRAINSOURCE DIODE CHARACTERISTICS I Maximum Continuous DrainSource 2 A S Diode Forward Current V Source to Drain Diode Forward Voltage V = 0 V, I = 2 A 0.8 1.2 V SD GS S t Reverse Recovery Time I = 6.8 A, 24 36 ns rr F di/dt = 100 A/ S Q Reverse Recovery Charge 19 29 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. a. 52 C/W when mounted on b. 145 C/W when mounted on 2 a 1 in pad of 2 oz copper a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2