FDMS1D2N03DSD POWERTRENCH Power Clip 30 V Asymmetric Dual NChannel MOSFETs General Description www.onsemi.com This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to ELECTRICAL CONNECTION enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Features Q1: N-Channel Max R = 3.25 m at V = 10 V, I = 19 A DS(on) GS D Max R = 4 m at V = 4.5 V, I = 17 A DS(on) GS D Q2: N-Channel N-Channel MOSFET Max R = 0.97 m at V = 10 V, I = 37 A DS(on) GS D PIN1 Max R = 1.25 m at V = 4.5 V, I = 34 A DS(on) GS D Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses. MOSFET Integration Enables Optimum Layout for Lower Circuit Top View Bottom View Inductance and Reduced Switch Node Ringing. Power Clip 56 RoHS Compliant (PQFN8 5x6) CASE 483AR Applications Computing PIN ASSIGNMENT Communications LSG HSG General Purpose Point of Load SW GR V+ SW SW V+ *PAD9 V+(HSD) MARKING DIAGRAM Y&Z&3&K FDMS1D2 N03DSD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDMS1D2N03DSD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2018 Rev. 5 FDMS1D2N03DSD/D * GND(LSS) PAD10FDMS1D2N03DSD MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Q1 Q2 Unit V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage +16/12 +16/12 V GS I A Drain Current D Continuous (T = 25C) (Note 5) 70 164 C Continuous (T = 85C) (Note 5) 54 126 C Continuous (T = 25C) 19 (Note 1a) 37 (Note 1b) A Continuous (T = 85C) 15 (Note 1a) 29 (Note 1b) A Pulsed (T = 25C) (Note 4) 362 1199 A E Single Pulsed Avalanche Energy (Note 3) 121 337 mJ AS P Power Dissipation for Single Operation W D 26 42 (T = 25C) C 2.1 (Note 1a) 2.3 (Note 1b) (T = 25C) A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Q1 Q2 Unit R Thermal Resistance, Junction to Case 4.8 3.0 C/W JC Thermal Resistance, Junction to Ambient 60 (Note 1a) 55 (Note 1b) R C/W JA R Thermal Resistance, Junction to Ambient 130 (Note 1c) 120 (Note 1d) C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Top Marking Package Reel Size Tape Width Quantity FDMS1D2N03DSD FDMS1D2N03DSD Power Clip 56 (PGFN8) 13 12 mm 3,000 Units (Pb-Free / Halogen Free) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Type Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 1 mA, V = 0 V Q1 30 V DSS D GS Q2 30 BV / T Breakdown Voltage Temperature I = 10 mA, referenced to 25 C Q1 15 mV/ C DSS J D Coefficient Q2 21 I Zero Gate Voltage Drain Current V = 24 V, V = 0 V Q1 1 A DSS DS GS 500 Q2 I Gate to Source Leakage Current, V = +16 V/12 V, Q1 100 nA GSS GS Forward V = 0 V Q2 100 DS nA ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 320 A Q1 0.8 1.3 2.5 V GS(th) GS DS D V = V , I = 1 mA Q2 1.0 1.5 3.0 GS DS D V / T Gate to Source Threshold Voltage I = 1 mA, referenced to 25 C Q1 3 mV/ C GS(th) J D Temperature Coefficient I = 10 mA, referenced to 25 C Q2 3 D www.onsemi.com 2