MOSFET N-Channel, POWERTRENCH 75 V, 80 A, 3.8 m FDH038AN08A1 Features www.onsemi.com R = 3.5 m (Typ.), V = 10 V, I = 80 A DS(ON) GS D Q (tot) = 125 nC (Typ.), V = 10 V g GS Low Miller Charge V R MAX I MAX DSS DS(ON) D Low Q Body Diode rr 75 V 3.8 m 80 A UIS Capability (Single Pulse and Repetitive Pulse) This Device is PbFree and is RoHS Compliant D Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit G Motor Drives and Uninterruptible Power Supplies S G D S TO2473 CASE 340CK MARKING DIAGRAM Y&Z&3&K FDH 038AN08A1 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDH038AN08A1 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: December, 2019 Rev. 3 FDH038AN08A1/DFDH038AN08A1 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 75 V DSS V Gate to Source Voltage 20 V GS I Drain Current A Continuous (T < 158C, V = 10 V) 80 D C GS Continuous (T = 25C, V = 10 V, 22 A GS R = 30 C/W) JA I Drain Current Pulsed Figure 4 A D E Single Pulse Avalanche Energy (Note 1) 1.17 J AS P Power Dissipation (T = 25C) 450 W D C Derate Above 25C 3.0 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting T = 25C, L = 0.65 mH, I = 60 A. J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. TO247 0.33 C/W JC R Thermal Resistance, Junction to Ambient, Max. TO247 30 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDH038AN08A1 FDH038AN08A1 TO247 Tube N/A 30 Units www.onsemi.com 2