X-On Electronics has gained recognition as a prominent supplier of FDG6332C MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDG6332C MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDG6332C ON Semiconductor

FDG6332C electronic component of ON Semiconductor
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See Product Specifications
Part No.FDG6332C
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20V N&P-Channel Power Trench
Datasheet: FDG6332C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5764 ea
Line Total: USD 0.58 
Availability - 19815
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 1
3000 : USD 0.1835
6000 : USD 0.1786
9000 : USD 0.174
12000 : USD 0.1714
27000 : USD 0.1676
51000 : USD 0.1651
102000 : USD 0.1626

66930
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.195
6000 : USD 0.195
9000 : USD 0.195
12000 : USD 0.195
15000 : USD 0.195

2741
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.4109
50 : USD 0.3314
150 : USD 0.2974
500 : USD 0.2549
3000 : USD 0.2359
6000 : USD 0.2245

19815
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5764
10 : USD 0.3872
100 : USD 0.2673
500 : USD 0.2222
1000 : USD 0.2035
3000 : USD 0.1617
9000 : USD 0.1562
24000 : USD 0.1496
45000 : USD 0.1485

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDG6332C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDG6332C and other electronic components in the MOSFETs category and beyond.

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The FDG6332C with MOSFET 20V N&P-Channel Power Trench is an advanced power MOSFET designed and manufactured by ON Semiconductor for power switching applications such as motor control, server and telecom power supply, and other power supplies requiring high frequency switching. This device uses the latest generation of NexFET™ technology, which provides an enhanced combination of low on-resistance, fast switching speeds, and dense packaging. It features complementary N- and P-channel devices operated from a single gate signal, resulting in improved power handling and PCB area usage. The FDG6332C is available in a PowerPAK® SO-8 package and is compliant with a wide range of automatic assembly and inspection techniques.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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