X-On Electronics has gained recognition as a prominent supplier of FDG6332C MOSFET across the USA, India, Europe, Australia, and various other global locations. FDG6332C MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FDG6332C ON Semiconductor

FDG6332C electronic component of ON Semiconductor
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See Product Specifications
Part No.FDG6332C
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET 20V N&P-Channel Power Trench
Datasheet: FDG6332C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4525 ea
Line Total: USD 0.45

Availability - 32262
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
20370
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1716
6000 : USD 0.1716
9000 : USD 0.1716
15000 : USD 0.1716
30000 : USD 0.1716

2901
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 5
Multiples : 5
5 : USD 0.3753
50 : USD 0.2989
150 : USD 0.2661
500 : USD 0.2252
3000 : USD 0.2071
6000 : USD 0.1962

32262
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4525
10 : USD 0.3734
100 : USD 0.2686
500 : USD 0.2185
1000 : USD 0.1828
3000 : USD 0.1583
9000 : USD 0.1583
24000 : USD 0.1549
45000 : USD 0.1538

5820
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1944
9000 : USD 0.1801
24000 : USD 0.175
45000 : USD 0.1729

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
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Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
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Product
Series
Transistor Type
Type
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Brand
Forward Transconductance - Min
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Typical Turn-Off Delay Time
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We are delighted to provide the FDG6332C from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDG6332C and other electronic components in the MOSFET category and beyond.

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The FDG6332C with MOSFET 20V N&P-Channel Power Trench is an advanced power MOSFET designed and manufactured by ON Semiconductor for power switching applications such as motor control, server and telecom power supply, and other power supplies requiring high frequency switching. This device uses the latest generation of NexFET™ technology, which provides an enhanced combination of low on-resistance, fast switching speeds, and dense packaging. It features complementary N- and P-channel devices operated from a single gate signal, resulting in improved power handling and PCB area usage. The FDG6332C is available in a PowerPAK® SO-8 package and is compliant with a wide range of automatic assembly and inspection techniques.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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