F085 20V N & P-Channel PowerTrench MOSFETs FDG6332C March 2009 FDG6332C F085 PowerTrench The N & P-Channel MOSFETs are produced using 0.7 A, 20V. R = 300 m = 4.5 V Fairchild Semiconductors advanced PowerTrench R = 400 m = 2.5 V process that has been especially tailored to minimize on-state resistance and yet maintain superior 0.6 A, 20V. R = 420 m = 4.5 V switching performance. R = 630 m = 2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint Low gate charge for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. High performance trench technology for extremely DC/DC converter SC70-6 package: small footprint (51% smaller than SSOT-6) low profile (1mm thick) Load switch LCD display inverter Qualified to AEC Q101 RoHS Compliant S G 1 6 D 2 5 D G Pin 1 S 3 4 o T =25 C unless otherwise noted A Units V Drain-Source Voltage V V Gate-Source Voltage V I Drain Current Continuous A D Pulsed P Power Dissipation for Single Operation W D T , T Operating and Storage Junction Temperature Range 55 to +150 C J Thermal Characteristics C/W R Thermal Resistance, Junction-to-Ambient Device Marking Reel Size Tape width Quantity FDG6332C F085 3000 units FDG6332C F085 Rev C2 (W) 2009 Fairchild Semiconductor Corporation 8mm 7 .32 Device Package Marking and Ordering Information JA 415 (Note 1) STG 0.3 (Note 1) 2 2.1 0.6 0.7 (Note 1) GSS 12 12 DSS 20 20 Q2 Q1 Parameter Symbol Absolute Maximum Ratings Complementary SC70-6 Applications DS(ON) low R GS DS(ON) V GS DS(ON) V Q2 GS DS(ON) V GS DS(ON) V Q1 General Description Features MOSFETs 20V N & P-Channel F085 20V N & P-Channel PowerTrench MOSFETs FDG6332C Electrical Characteristics T = 25C unless otherwise noted A Min Typ Units V = 0 V, I = 250 A D V DrainSource Breakdown Voltage V = 0 V, I = 250 A D Breakdown Voltage Temperature I = 250 A,Ref. to 25 C mV/ C D Coefficient T I = 250 A,Ref. to 25 C J D V = 16 V, V = 0 V 1 A I Zero Gate Voltage Drain Current V = 16 V, V = 0 V I GateBody Leakage, Forward V = 12 V, = 0 V I GateBody Leakage, Reverse V = 12V , = 0 V V = V = 250 A V Gate Threshold Voltage D V ) V = V = 250 A D Gate Threshold Voltage V I D = 250 A ,Ref . To 25 C mV/ C Temperature Coefficient 3 T I = 250 A,Ref. to 25 C J D V = 4.5 V, I =0.7 A R Static DrainSource D m V = 2.5 V, I =0.6 A D OnResistance V = 4.5 V, I =0.7A,T C D J V = 4.5 V, I = 0.6 A G S D V = 2.5 V, I = 0.5 A D V =4.5 V, I =0.6 A,T C D J V = 5 V I = 0.7 A g Forward Transconductance D S FS V = 5 V I = 0.6A D V = 4.5 V, V = 5 V I OnState Drain Current 1 A V = 4.5 V, V = 5 V V =10 V, V = 0 V, f=1.0MHz C Input Capacitance iss V =10 V, V = 0 V, f=1.0MHz GS V =10 V, V = 0 V, f=1.0MHz C Output Capacitance oss V =10 V, V = 0 V, f=1.0MHz GS V =10 V, V = 0 V, f=1.0MHz C Reverse Transfer Capacitance rss V =10 V, V = 0 V, f=1.0MHz GS 9 t TurnOn Delay Time 5 ns Q1 : V I D V = 4.5 V, R = 6 G S t TurnOn Rise Time 7 ns r Q2 : V =10 V, I D 9 t TurnOff Delay Time ns d(off) V = 4.5 V, R = 6 6 3 t TurnOff Fall Time ns f Q Total Gate Charge g Q1 : V I = 0.7 A 2 D V = 4.5 V, R = 6 Q GateSource Charge Q2 : V =10 V, = 0.6 A D Q GateDrain Charge V = 4.5 V, R GEN FDG6332C F085 Rev C2 (W) Q2 0.4 GS = 6 nC Q1 gd 0.3 DS I Q2 0.3 For nC Q1 gs 0.24 GEN GS DS Q2 1.4 =10 V, For nC Q1 1.5 1.1 Q2 3.4 1.7 Q1 1.5 Q2 12 GEN GS Q1 18 DS = 1 A For Q2 25 14 15 Q1 GEN 11 5.5 DS Q2 = 1 A =10 V, For d(on) 10 Q1 (Note 2) Switching Characteristics DS Q2 pF 16 GS DS Q1 Q2 24 DS Q1 pF 34 GS DS Q2 114 DS pF 113 GS DS Q1 Dynamic Characteristics 2 DS GS Q2 D(on) DS GS Q1 1.8 DS Q2 Q1 2.8 DS 400 700 GS =125 630 470 GS Q2 420 300 247 442 GS =125 293 GS 400 DS(on) GS Q1 300 180 Q2 th) GS( 2.8 Q1 1.5 1.2 -0.6 GS DS Q2 , I Q1 th GS( 1.5 1.1 0.6 GS DS , I (Note 2) On Characteristics DS GS 100 V GSSR GSSF nA /I DS GS GSSR GSSF nA 100 V /I GS DS 1 Q2 DSS GS DS Q1 14 Q2 14 Q1 DSS BV GS 20 Q2 DSS BV 20 Q1 GS Off Characteristics Max Test Conditions Parameter Symbol