FDS4675 F085 P-Channel PowerTrench MOSFET June 2013 tm FDS4675 F085 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 40 V R = 0.013 V = 10 V DS(ON) GS Fairchild Semiconductors advanced PowerTrench RDS(ON) = 0.017 V GS = 4.5 V process. It has been optimized for power management applications requiring a wide range of gave drive Fast switching speed voltage ratings (4.5V 20V). High performance trench technology for extremely Applications low R DS(ON) Power management High power and current handling capability Load switch Qualified to AEC Q101 Battery protection RoHS Compliant D 5 4 D D 6 3 D 7 2 SO-8 G S 8 1 S S Pin 1 o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage V DSS 40 V Gate-Source Voltage 20 V GSS ID Drain Current Continuous (Note 1a) 11 A Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.4 (steady state) P W D (Note 1b) 1.4 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 62.5 (steady state), 50 (10 sec) RJA C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 C/W JA Thermal Resistance, Junction-to-Case (Note 1) 25 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4675 FDS4675 F085 13 12mm 2500 units 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS4675 F085 Rev. C1 FDS4675 F085 P-Channel PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 40 V DSS GS D BVDSS Breakdown Voltage Temperature I = 250 A, Referenced to 25C 34 mV/C D Coefficient T J I Zero Gate Voltage Drain Current V = 32 V, V = 0 V 1 A DSS DS GS I GateBody Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 20 V V = 0 V 100 nA GSSR GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.4 3 V GS(th) DS GS D Gate Threshold Voltage VGS(th) I = 250 A, Referenced to 25C D 4.6 mV/C Temperature Coefficient T J R Static DrainSource V = 10 V, I = 11 A 10 13 DS(on) GS D m OnResistance V = 4.5 V, I = 9.5 A 13 17 GS D V =10 V, I =11 A, T =125C 15 21 GS D J gFS Forward Transconductance VDS = 5 V, ID = 11 A 44 S Dynamic Characteristics C Input Capacitance 4350 pF iss V = 20 V, V = 0 V, DS GS C Output Capacitance f = 1.0 MHz 622 pF oss C Reverse Transfer Capacitance 290 pF rss Switching Characteristics (Note 2) t TurnOn Delay Time V = 20 V, I = 1 A, 20 36 ns d(on) DD D VGS = 4.5 V, RGEN = 6 t TurnOn Rise Time 29 46 ns r td(off) TurnOff Delay Time 95 152 ns t TurnOff Fall Time 60 96 ns f Q Total Gate Charge V = 20 V, I = 11 A, 40 56 nC g DS D V = 4.5 V GS Q GateSource Charge 11 nC gs Qgd GateDrain Charge 13 nC DrainSource Diode Characteristics and Maximum Ratings I Maximum Continuous DrainSource Diode Forward Current 2.1 A S DrainSource Diode Forward V V = 0 V, I = 2.1 A (Note 2) 0.7 1.2 V SD GS S Voltage Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. R is guaranteed by design while R is determined by the user s board design. JC CA a) 50C/W when b) 105C/W when c) 125C/W when mounted on a 2 2 mounted on a 1in mounted on a .04 in minimum pad. pad of 2 oz copper pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS4675 F085 Rev. C1 2 www.fairchildsemi.com