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FDS4897AC Dual N & P-Channel PowerTrench MOSFET October 2008 FDS4897AC Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 6.1 A, 26 m P-Channel: -40 V, -5.2 A, 39 m Features General Description Q1: N-Channel These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max r = 26 m at V = 10 V, I = 6.1 A DS(on) GS D that has been especially tailored to minimize on-state resistance Max r = 31 m at V = 4.5 V, I = 5.6 A DS(on) GS D and yet maintain superior switching performance. Q2: P-Channel Max r = 39 m at V = -10 V, I = -5.2 A DS(on) GS D Applications Max r = 65 m at V = -4.5 V, I = -4.1 A DS(on) GS D Inverter 100% UIL Tested Power Supplies RoHS Compliant D2 D2 Q2Q2 D2 5 4 G2 D1 D1 D2 6 3 S2 Q1Q1 G2 2 G1 D1 7 S2 G1 8 S1 D1 1 S1 Pin 1 SO-8 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 40 -40 V DS V Gate to Source Voltage 20 20 V GS Drain Current - Continuous 6.1 -5.2 I A D - Pulsed 24 -24 Power Dissipation for Dual Operation 2.0 P Power Dissipation for Single Operation T = 25 C (Note 1a) 1.6 W D A T = 25 C (Note 1b) 0.9 A E Single Pulse Avalanche Energy (Note 3) 37 73 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case, (Note 1) 40 JC C/W R Thermal Resistance, Junction to Ambient, (Note 1a) 78 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS4897AC FDS4897AC SO-8 13 12 mm 2500 units 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS4897AC Rev.C