MOSFET Dual N-Channel, POWERTRENCH , SyncFET FDS6900AS General Description The FDS6900AS is designed to replace two single SO8 MOSFETs www.onsemi.com and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other S1D2 S1D2 battery powered electronic devices. FDS6900AS contains two unique S1D2 30 V, Nchannel, logic level, PowerTrench MOSFETs designed to G1 maximize power conversion efficiency. S2 G2 The highside switch (Q1) is designed with specific emphasis on D1 Pin 1 D1 reducing switching losses while the lowside switch (Q2) is optimized SOIC8 to reduce conduction losses. Q2 also includes an integrated Schottky CASE 751EB diode using ON Semiconductors monolithic SyncFET technology. Features ELECTRICAL CONNECTION Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V 1 8 R = 22 m at V = 10 V DS(on) GS Q1 2 7 R = 28 m at V = 4.5 V DS(on) GS Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC 3 6 typical), 6.9 A, 30 V Q2 4 5 R = 27 m at V = 10 V DS(on) GS R = 34 m at V = 4.5 V DS(on) GS 100% R (Gate Resistance) Tested Dual NChannel SyncFet G These Devices are PbFree and are RoHS Compliant MARKING DIAGRAM Specifications ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A FDS6900AS ALYW Symbol Parameter Q2 Q1 Units V DrainSource Voltage 30 30 V DSS V GateSource Voltage 20 20 V GSS FDS6900AS = Specific Device Code I Drain Current A D A = Assembly Site Continuous (Note 1a) 8.2 6.9 L = Wafer Lot Number Pulsed 30 20 YW = Assembly Start Week P W Power Dissipation for Dual Operation 2 D Power Dissipation for Single Operation ORDERING INFORMATION (Note 1a) 1.6 (Note 1b) 1 Device Package Shipping (Note 1c) 0.9 FDS6900AS SOIC8 2,500 / T , T Operating and Storage Junction 55 to +150 C J STG (PbFree) Tape & Reel Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2020 Rev. 3 FDS6900AS/DFDS6900AS THERMAL CHARACTERISTICS Symbol Parameter Ratings Units R Thermal Resistance, JunctiontoAmbient (Note 1a) 78 C/W JA R Thermal Resistance, JunctiontoCase (Note 1) 40 C/W JC Table 1. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS I = 1 mA, V = 0 V BV Drain to Source Breakdown Voltage Q2 30 V DSS D GS I = 250 A, V = 0 V Q1 30 D GS Breakdown Voltage Temperature I = 10 mA, referenced to 25C Q2 27 mV/C BV / DSS D T Coefficient J I = 250 A, referenced to 25C Q1 22 D Q2 I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 500 A DSS DS GS Q1 1 Q2 I GateBody Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS Q1 ON CHARACTERISTICS (Note 2) V Gate to Source Threshold Voltage V = V , I = 1 mA Q2 1 1.9 3 V GS DS D GS(th) V = V , I = 250 A Q1 1 1.9 3 GS DS D V / Gate to Source Threshold Voltage I = 10 mA, referenced to 25C Q2 3.2 mV/C D GS(th) T Temperature Coefficient J I = 250 A, referenced to 25C Q1 4.2 D R Static DrainSource OnResistance Q2 m V = 10 V, I = 8.2 A 17 22 DS(on) GS D V = 10 V, I = 8.2 A, T = 125C 23 36 GS D J V = 4.5 V, I = 7.6 A 21 28 GS D Q1 V = 10 V, I = 6.9 A 22 27 GS D V = 10 V, I = 6.9 A, T = 125C 30 38 GS D J V = 4.5 V, I = 6.2 A 27 34 GS D I OnState Drain Current Q2 30 A V = 10 V, V = 5 V D(on) GS DS Q1 20 Q2 g Forward Transconductance V = 5 V, I = 8.2 A 25 S FS DS D Q1 V = 5 V, I = 6.9 A 21 DS D DYNAMIC CHARACTERISTICS V = 15 V, V = 0 V, f = 1 MHz Q2 C Input Capacitance 570 pF iss DS GS Q1 600 Q2 C Output Capacitance 180 pF oss Q1 150 Q2 C Reverse Transfer Capacitance 70 pF rss Q1 70 R Q2 Gate Resistance 2.8 4.9 G Q1 2.2 3.8 SWITCHING CHARACTERISTICS (Note 2) V = 15 V, I = 1 A, V = 10 V, t Q2 TurnOn Delay Time DD D GS 10 19 ns d(on) R = 6 GEN Q1 9 18 Q2 t TurnOn Rise Time 5 10 ns r Q1 4 8 Q2 t TurnOff Delay Time 26 42 ns d(off) Q1 23 32 Q2 t TurnOff Fall Time 3 6 ns f Q1 3 6 www.onsemi.com 2