ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS6982AS FDS6982AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features Q2: Optimized to minimize conduction losses The FDS6982AS is designed to replace two single SO- Includes SyncFET Schottky body diode 8 MOSFETs and Schottky diode in synchronous 8.6A, 30V R max= 13.5m V = 10V DC:DC power supplies that provide various peripheral DS(on) GS voltages for notebook computers and other battery R max= 16.5m V = 4.5V powered electronic devices. FDS6982AS contains two DS(on) GS unique 30V, N-channel, logic level, PowerTrench Low gate charge (21nC typical) MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with Q1: Optimized for low switching losses specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated 6.3A, 30V R max= 28.0m V = 10V DS(on) GS Schottky diode using ON Semiconductors R max= 35.0m V = 4.5V monolithic SyncFET technology. DS(on) GS Applications Low gate charge (11nC typical) Notebook D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage 20 20 V GSS I Drain Current - Continuous (Note 1a) 8.6 6.3 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 40 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6982AS FDS6982AS 13 12mm 2500 units Publication Order Number: 2008 Semiconductor Components Industries, LLC. FDS6982AS/D October-2017, Rev. 2