MOSFET N-Channel, POWERTRENCH , SyncFET FDS8672S General Description The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30 V www.onsemi.com MOSFET is designed to maximize power conversion efficiency, providing a low R and low gate charge. The FDS8672S includes DS(on) a patented combination of a MOSFET monolithically integrated with D a Schottky diode using ON Semiconductors monolithic SyncFET D D technology. D Features G S Max R = 4.8 m at V = 10 V, I = 18 A DS(on) GS D S Pin 1 S Max R = 7.0 m at V = 4.5 V, I = 15 A DS(on) GS D Includes SyncFET Schottky Body Diode SOIC8 CASE 751EB High Performance Trench Technology for Extremely Low R DS(on) and Fast Switching MARKING DIAGRAM High Power and Current Handling Capability 100% R (Gate Resistance) Tested g This Device is PbFree, Halogen Free/BFR Free and is RoHS Compliant Y&Z&2&K FDS Applications 8672S Notebook Vcore Low Side Switch Synchronous Rectifier for DC/DC Converters Point of Load Low Side Switch &Y = ON Semiconductor Logo &Z = Assembly Plant Code &2 = Numeric Date Code &K = Lot Code FDS8672S = Specific Device Code PIN CONFIGURATION G 5 4 D 6 3 S D D 7 2 S 8 1 D S ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: November, 2019 Rev. 2 FDS8672S/DFDS8672S MOSFET MAXIMUM RATINGS (T = 25C Unless Otherwise Noted) A Symbol Parameter Ratings Unit V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS I A Drain Current Continuous 18 D Drain Current Pulsed (Note 4) 80 E Single Pulse Avalanche Energy (Note 3) 216 mJ AS Power Dissipation T = 25C (Note 1a) 2.5 A P W D Power Dissipation T = 25C (Note 1b) 1.0 A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case (Note 1) 25 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA ELECTRICAL CHARACTERISTICS (T = 25C Unless Otherwise Noted) J Symbol Parameter Min Typ Max Unit Test Conditions OFF CHARACTERISTICS BV Drain to Source Breakdown I = 1 mA, V = 0 V 30 V DSS D GS Voltage BV / Breakdown Voltage Temperature I = 10 mA, referenced to 25C 33 mV/C D DSS T Coefficient J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 500 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 1 mA 1.0 2.1 3.0 V GS(th) GS DS D V / Gate to Source Threshold Voltage I = 10 mA, referenced to 25C 5 mV/C GS(th) D T Temperature Coefficient J R Static Drain to Source On V = 10 V, I = 18 A 3.8 4.8 m DS(on) GS D Resistance V = 4.5 V, I = 15 A 5.3 7.0 GS D V = 10 V, I = 18 A, T = 125C 5.3 7.8 GS D J g Forward Transconductance V = 5 V, I = 18 A 78 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 15 V, V = 0 V, f = 1 MHz 2005 2670 pF iss DS GS C Output Capacitance 985 1310 pF oss C Reverse Transfer Capacitance 135 205 pF rss R Gate Resistance f = 1 MHz 0.6 2.0 g SWITCHING CHARACTERISTICS V = 15 V, I = 18 A, V = 10 V, t TurnOn Delay Time 12 22 ns d(on) DD D GS R = 6 GEN t Rise Time 4 10 ns r t TurnOff Delay Time 26 42 ns d(off) t Fall Time 3 10 ns f www.onsemi.com 2