ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS8958A -F085 Dual N & P-Channel PowerTrench MOSFET FDS8958A FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1: N-Channel These dual N- and P-Channel enhancement 7.0A, 30V R = 0.028W V = 10V DS(on) GS mode power field effect transistors are produced R = 0.040W V = 4.5V using ON Semiconductors advanced DS(on) GS PowerTrench process that has been especially Q2: P-Channel tailored to minimize on-state ressitance and yet maintain superior switching performance. 5A, -30V R = 0.052W V = -10V DS(on) GS - R = 0.080W V = -4.5V These devices are well suited for low voltage and DS(on) GS battery powered applications where low in-line power Fast switching speed loss and fast switching are required. High power and handling capability in a widely used surface mount package Qualified to AEC Q101 RoHS Compliant D2 Q2 D D2 5 4 D D1 D D1 D 6 3 Q1 7 2 G2 SO-8 S2 G G1 S 8 1 S1 S SO-8 Pin 1 S Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage V GSS 20 20 ID Drain Current - Continuous (Note 1a) 7 -5 - Pulsed 20 -20 A P Power Dissipation for Dual Operation 2 2 D Power Dissipation for Single Operation (Note 1a) 1.6 1.6 W (Note 1c) 0.9 0.9 E Single Pulse Avalanche Energy (Note 3) 54 13 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 J STG C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8958A 13 12mm 2500 units FDS8958A-F085 1 Publication Order Number: 2010 Semiconductor Components Industries, LLC. September-2017, Rev. 1 FDS8958A-F085/D