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V = 10 V, I = 2.8 A This N-Channel MOSFET is produced using Fairchld Semicon- DS(on) GS D ductors advanced PowerTrench process that has been tai- R = 156 m (Typ.) V = 5 V, I = 1.8 A DS(on) GS D lored to minimize the on-state resistance and maintain superior Low Gate Charge (Typ. 2.9 nC) switching performance. Low C (Typ. 2.04 pF) rss Fast Switching Application 100% Avalanche Tested Improved dv/dt Capability Consumer Appliances RoHS Compliant LED TV and Monitor Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D D S D SOT-223 G D S G MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDT1600N10ALZ Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS - Continuous (T = 25 C) 5.6 C I Drain Current A D - Continuous (T = 100 C) 3.5 C I Drain Current - Pulsed (Note 2) 11.2 A DM E Single Pulse Avalanche Energy (Note 3) 9.2 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 4) 6.0 V/ns (T = 25 C) 10.42 W C P Power Dissipation D - Derate Above 25 C 0.083 C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics R Thermal Resistance, Junction to Case, Max. (Note 1) 12 JC C/W R Thermal Resistance, Junction to Ambient, Max. (Note 1a) 60 JA Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDT1600N10ALZ 16010ALZ SOT-223 Tape and Reel 13 12 mm 4000 units 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDT1600N10ALZ Rev. C2