MTD6N15 Power Field Effect Transistor DPAK for Surface Mount NChannel EnhancementMode Silicon Gate This Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, MTD6N15 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V = 0 Vdc, I = 0.25 mAdc) V 150 Vdc GS D (BR)DSS Zero Gate Voltage Drain Current I Adc DSS (V = Rated V , V = 0 Vdc) 10 DS DSS GS T = 125C 100 J GateBody Leakage Current, Forward (V = 20 Vdc, V = 0) I 100 nAdc GSF DS GSSF GateBody Leakage Current, Reverse (V = 20 Vdc, V = 0) I 100 nAdc GSR DS GSSR ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (V = V , I = 1.0 mAdc) V 2.0 4.5 Vdc DS GS D GS(th) T = 100C 1.5 4.0 J Static DrainSource OnResistance (V = 10 Vdc, I = 3.0 Adc) R 0.3 GS D DS(on) DrainSource OnVoltage (V = 10 Vdc) V Vdc GS DS(on) (I = 6.0 Adc) 1.8 D (I = 3.0 Adc, T = 100C) 1.5 D J Forward Transconductance (V = 15 Vdc, I = 3.0 Adc) g 2.5 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 1200 pF iss (V = 25 Vdc, V = 0 Vdc, f = 1.0 MHz) DS GS Output Capacitance C 500 oss (See Figure 11) Reverse Transfer Capacitance C 120 rss SWITCHING CHARACTERISTICS* (T = 100C) J TurnOn Delay Time t 50 ns d(on) Rise Time t 180 r (V = 25 Vdc, I = 3.0 Adc, R = 50 ) DD D G (See Figures 13 and 14) TurnOff Delay Time t 200 d(off) Fall Time t 100 f Total Gate Charge Q 15 (Typ) 30 nC g (V = 0.8 Rated V , DS DSS GateSource Charge I = Rated I , V = 10 Vdc) Q 8.0 (Typ) gs D D GS (See Figure 12) GateDrain Charge Q 7.0 (Typ) gd SOURCEDRAIN DIODE CHARACTERISTICS* Forward OnVoltage V 1.3 (Typ) 2.0 Vdc SD Forward TurnOn Time (I = 6.0 Adc, di/dt = 25 A/ s, V = 0 Vdc) t Limited by stray inductance S GS on Reverse Recovery Time t 325 (Typ) ns rr 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2.5 25 2 20 T C 1.5 15 1 10 0.5 5 0 0 25 50 75 100 125 150 T T T, TEMPERATURE (C) A C Figure 1. Power Derating