N O I T A T FDD8778/FDU8778 N-Channel PowerTrench MOSFET N E M E L MP I E E May 2006 FDD8778/FDU8778 tm N-Channel PowerTrench MOSFET 25V, 35A, 14m Features General Description Max r = 14.0m at V = 10V, I = 35A This N-Channel MOSFET has been designed specifically DS(on) GS D to improve the overall efficiency of DC/DC converters using Max r = 21.0m at V = 4.5V, I = 33A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge: Q = 12.6nC(Typ), V = 10V g(TOT) GS r and fast switching speed. DS(on) Low gate resistance RoHS compliant Application DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G D G S I-PAK G DS Short Lead I-PAK (TO-251AA) S MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package Limited) 35 I -Continuous (Die Limited) 40 A D -Pulsed (Note 1) 145 E Single Pulse Avalanche Energy (Note 2) 24 mJ AS P Power Dissipation 39 W D T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case TO-252,TO-251 3.8 C/W JC R Thermal Resistance, Junction to Ambient TO-252,TO-251 100 C/W JA 2 R Thermal Resistance, Junction to Ambient TO-252,1in copper pad area 52 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8778 FDD8778 TO-252AA 13 12mm 2500 units FDU8778 FDU8778 TO-251AA N/A(Tube) N/A 75 units FDU8778 FDU8778 F071 TO-251AA N/A(Tube) N/A 75 units 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD8778/FDU8778 Rev. A R F D A E L FDD8778/FDU8778 N-Channel PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 250A, V = 0V 25 V DSS D GS BV Breakdown Voltage Temperature I = 250A, referenced to DSS D 17.2 mV/C T Coefficient 25C J 1 V = 20V, DS I Zero Gate Voltage Drain Current A DSS V = 0V T = 150C 250 GS J I Gate to Source Leakage Current V = 20V 10 A GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250A 1.2 1.5 2.5 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 250A, referenced to GS(th) D -5.3 mV/C T Temperature Coefficient 25C J V = 10V, I = 35A 11.6 14.0 GS D V = 4.5V, I = 33A 15.7 21.0 GS D r Drain to Source On Resistance m DS(on) V = 10V, I = 35A GS D 18.2 23.8 T = 175C J Dynamic Characteristics C Input Capacitance 635 845 pF iss V = 13V, V = 0V, DS GS C Output Capacitance 160 215 pF oss f = 1MHz C Reverse Transfer Capacitance 108 162 pF rss R Gate Resistance f = 1MHz 1.3 g Switching Characteristics t Turn-On Delay Time 6 12 ns d(on) V = 13V, I = 35A DD D t Rise Time 22 35 ns r V = 10V, R = 27 GS GS t Turn-Off Delay Time 43 69 ns d(off) t Fall Time 32 51 ns f Q Total Gate Charge at 10V V = 0V to 10V 12.6 18 nC g(TOT) GS V = 13V DD Q Total Gate Charge at 5V V = 0V to 5V 6.7 9.4 nC g(5) GS I = 35A D Q Gate to Source Gate Charge 2.1 nC gs I = 1.0mA g Q Gate to Drain MillerCharge 3.2 nC gd Drain-Source Diode Characteristics V = 0V, I = 35A 1.03 1.25 GS S V Source to Drain Diode Forward Voltage V SD V = 0V, I = 15A 0.89 1.2 GS S t Reverse Recovery Time I = 35A, di/dt = 100A/s 25 38 ns rr F Q Reverse Recovery Charge I = 35A, di/dt = 100A/s 17 26 nC rr F Notes: 1: Pulse time < 300s, Duty cycle = 2%. o 2: Starting T = 25 C, L = 0.1mH, I = 22A ,V = 23V, V = 10V. J AS DD GS FDD8778/FDU8778 Rev. A 2 www.fairchildsemi.com